Single Event Upset Testing Method of Spin-Orbit Torque Magnetic Storage Array

Space radiation poses a significant risk of inducing single event upsets (SEU) in electronic devices. Of particular concern is the susceptibility of spin-orbit torque (SOT) magnetic storage cells, known for their sub-nanosecond operational speeds, to such SEUs. In this study, we propose a novel SEU testing methodology tailored for SOT arrays. By subjecting the SOT MARM array to comprehensive testing encompassing magnetic fields, electric fields, and ion radiation fields, and by simulating harsh environmental conditions with varying intensities within the SOT array, we systematically evaluate device resilience and establish corresponding reliability metrics. This approach allows for a clear classification of device resistance levels, offering a robust framework to gauge device reliability. Consequently, this method furnishes safe and effective indicators, establishing standards crucial for selecting devices that align with specific environmental requirements in future specialized settings.