Simulation on plasma doping for shallow junction formation

Min Yu; Huihui Ji; Ming Li; Ru Huang; Xing Zhang

doi:10.1109/IWJT.2008.4540008

Simulation on plasma doping for shallow junction formation

Min Yu^*
, Huihui Ji
, Ming Li
, Ru Huang
, Xing Zhang

^*Corresponding author for this work

School of Electronic and Information Engineering

Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.

Original language	English
Title of host publication	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages	14-19
Number of pages	6
DOIs	https://doi.org/10.1109/IWJT.2008.4540008
State	Published - 2008
Event	IWJT-2008 - International Workshop on Junction Technology - Shanghai, China Duration: 15 May 2008 → 16 May 2008

Publication series

Name	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Conference

Conference	IWJT-2008 - International Workshop on Junction Technology
Country/Territory	China
City	Shanghai
Period	15/05/08 → 16/05/08

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10.1109/IWJT.2008.4540008

Cite this

@inproceedings{7bb73fcea0154c008d51e62438c1e28c,

title = "Simulation on plasma doping for shallow junction formation",

abstract = "Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.",

author = "Min Yu and Huihui Ji and Ming Li and Ru Huang and Xing Zhang",

year = "2008",

doi = "10.1109/IWJT.2008.4540008",

language = "英语",

isbn = "9781424417384",

series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

pages = "14--19",

booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",

}

Yu, M, Ji, H, Li, M, Huang, R & Zhang, X 2008, Simulation on plasma doping for shallow junction formation. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540008, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology, pp. 14-19, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 15/05/08. https://doi.org/10.1109/IWJT.2008.4540008

Simulation on plasma doping for shallow junction formation. / Yu, Min; Ji, Huihui; Li, Ming et al.
IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 14-19 4540008 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation on plasma doping for shallow junction formation

AU - Yu, Min

AU - Ji, Huihui

AU - Li, Ming

AU - Huang, Ru

AU - Zhang, Xing

PY - 2008

Y1 - 2008

N2 - Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.

AB - Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.

UR - https://www.scopus.com/pages/publications/50849136830

U2 - 10.1109/IWJT.2008.4540008

DO - 10.1109/IWJT.2008.4540008

M3 - 会议稿件

AN - SCOPUS:50849136830

SN - 9781424417384

T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

SP - 14

EP - 19

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

T2 - IWJT-2008 - International Workshop on Junction Technology

Y2 - 15 May 2008 through 16 May 2008

ER -

Simulation on plasma doping for shallow junction formation

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