@inproceedings{286d53536e6646999e3065167fe16d44,
title = "Simulating enhanced diffusion and activation of boron by atomistic model",
abstract = "The Kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5keV and annealed at 900°C-1200°C are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by ultra-low energy implantation or predoping. Analysis on the evolution of B-Si clusters in annealing is performed.",
author = "Min Yu and Xiao Zhang and Liming Ren and Huihui Ji and Kai Zhan and Ru Huang and Xing Zhang and Yangyuan Wang and Jinyu Zhang and Hideki Oka",
year = "2006",
language = "英语",
isbn = "1424400473",
series = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",
pages = "36--39",
booktitle = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",
note = "Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 ; Conference date: 15-05-2006 Through 16-05-2006",
}