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Silicon nanorods prepared by glancing angle catalytic chemical vapor deposition

  • Fengzhen Liu*
  • , Yanhong Ma
  • , Meifang Zhu
  • , Penggang Yin
  • *Corresponding author for this work
  • University of Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

Vertically oriented amorphous and microcrystalline Si nanorods grown on different substrates were successfully obtained by Cat CVD with the glancing angle incident silane flux at low temperatures. The influences of the substrate type, substrate temperature, post treatment and hydrogen dilution on the microstructure of Si nanorods were investigated. The density and diameter of nanorods are varying with the substrates. The hydrogen dilution of silane dominates the crystallization of Si nanorods rather than high substrate temperature at 550 °C and annealing at 900 °C in nitrogen for 6 h. The crystallized Si nanorods with crystalline volume fraction, Xc, of 0.55 were achieved under a low substrate temperature of 140 °C.

Original languageEnglish
Pages (from-to)3492-3495
Number of pages4
JournalThin Solid Films
Volume517
Issue number12
DOIs
StatePublished - 30 Apr 2009

Keywords

  • Cat-CVD
  • Crystallization
  • GLAD
  • Silicon nanorods

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