Si和SiC功率器件结温提取技术现状及展望

Lina Wang; Jie Deng; Junyi Yang; Wuhua Li

doi:10.19595/j.cnki.1000-6753.tces.180296

Si和SiC功率器件结温提取技术现状及展望

Translated title of the contribution: Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives

Lina Wang^*
, Jie Deng
, Junyi Yang
, Wuhua Li

^*Corresponding author for this work

School of Automation Science and Electrical Engineering

Research output: Contribution to journal › Review article › peer-review

38 Scopus citations

Abstract

Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.

Translated title of the contribution	Junction Temperature Extraction Methods for Si and SiC Power Devices-a Review and Possible Alternatives
Original language	Chinese (Traditional)
Pages (from-to)	703-716
Number of pages	14
Journal	Diangong Jishu Xuebao/Transactions of China Electrotechnical Society
Volume	34
Issue number	4
DOIs	https://doi.org/10.19595/j.cnki.1000-6753.tces.180296
State	Published - 25 Feb 2019

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title = "Si和SiC功率器件结温提取技术现状及展望",

abstract = "Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.",

keywords = "Junction temperature extraction, Power semiconductor devices, Si, SiC, Temperature sensitive parameters",

author = "Lina Wang and Jie Deng and Junyi Yang and Wuhua Li",

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doi = "10.19595/j.cnki.1000-6753.tces.180296",

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T1 - Si和SiC功率器件结温提取技术现状及展望

AU - Wang, Lina

AU - Deng, Jie

AU - Yang, Junyi

AU - Li, Wuhua

PY - 2019/2/25

Y1 - 2019/2/25

N2 - Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.

AB - Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.

KW - Junction temperature extraction

KW - Power semiconductor devices

KW - Si

KW - SiC

KW - Temperature sensitive parameters

UR - https://www.scopus.com/pages/publications/85064767934

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DO - 10.19595/j.cnki.1000-6753.tces.180296

M3 - 文献综述

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SN - 1000-6753

VL - 34

SP - 703

EP - 716

JO - Diangong Jishu Xuebao/Transactions of China Electrotechnical Society

JF - Diangong Jishu Xuebao/Transactions of China Electrotechnical Society

IS - 4

ER -

Si和SiC功率器件结温提取技术现状及展望

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