Self-compliance unipolar resistive switching and mechanism of Cu/SiO 2/TiN RRAM devices

D. Yu; L. F. Liu; P. Huang; F. F. Zhang; B. Chen; B. Gao; Y. Hou; D. D. Han; Y. Wang; J. F. Kang; X. Zhang

doi:10.1109/SNW.2012.6243356

Self-compliance unipolar resistive switching and mechanism of Cu/SiO ₂/TiN RRAM devices

D. Yu^*
, L. F. Liu
, P. Huang
, F. F. Zhang
, B. Chen
, B. Gao
, Y. Hou
, D. D. Han
, Y. Wang
, J. F. Kang
, X. Zhang

^*Corresponding author for this work

Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

CMOS compatible Cu/SiO ₂/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.

Original language	English
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243356
State	Published - 2012
Externally published	Yes
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: 10 Jun 2012 → 11 Jun 2012

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/06/12 → 11/06/12

Keywords

RRAM
SiO
unipolar switching

Access to Document

10.1109/SNW.2012.6243356

Cite this

Yu, D., Liu, L. F., Huang, P., Zhang, F. F., Chen, B., Gao, B., Hou, Y., Han, D. D., Wang, Y., Kang, J. F., & Zhang, X. (2012). Self-compliance unipolar resistive switching and mechanism of Cu/SiO ₂/TiN RRAM devices. In 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 Article 6243356 (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012). https://doi.org/10.1109/SNW.2012.6243356

@inproceedings{9f01166ca6a04501b87df8508acf523a,

title = "Self-compliance unipolar resistive switching and mechanism of Cu/SiO 2/TiN RRAM devices",

abstract = "CMOS compatible Cu/SiO 2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.",

keywords = "RRAM, SiO, unipolar switching",

author = "D. Yu and Liu, \{L. F.\} and P. Huang and Zhang, \{F. F.\} and B. Chen and B. Gao and Y. Hou and Han, \{D. D.\} and Y. Wang and Kang, \{J. F.\} and X. Zhang",

year = "2012",

doi = "10.1109/SNW.2012.6243356",

language = "英语",

isbn = "9781467309943",

series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",

}

Yu, D, Liu, LF, Huang, P, Zhang, FF, Chen, B, Gao, B, Hou, Y, Han, DD, Wang, Y, Kang, JF & Zhang, X 2012, Self-compliance unipolar resistive switching and mechanism of Cu/SiO ₂/TiN RRAM devices. in 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012., 6243356, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, Honolulu, HI, United States, 10/06/12. https://doi.org/10.1109/SNW.2012.6243356

TY - GEN

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AU - Yu, D.

AU - Liu, L. F.

AU - Huang, P.

AU - Zhang, F. F.

AU - Chen, B.

AU - Gao, B.

AU - Hou, Y.

AU - Han, D. D.

AU - Wang, Y.

AU - Kang, J. F.

AU - Zhang, X.

PY - 2012

Y1 - 2012

N2 - CMOS compatible Cu/SiO 2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.

AB - CMOS compatible Cu/SiO 2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.

KW - RRAM

KW - SiO

KW - unipolar switching

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DO - 10.1109/SNW.2012.6243356

M3 - 会议稿件

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