Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Kaigui Zhu; Wu Wang; Qingyi Shao; Dongning Zhao; Yongfeng Lu; Natale Ianno

doi:10.1063/1.3583673

Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Kaigui Zhu^*
, Wu Wang
, Qingyi Shao
, Dongning Zhao
, Yongfeng Lu
, Natale Ianno

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

Original language	English
Article number	173110
Journal	Applied Physics Letters
Volume	98
Issue number	17
DOIs	https://doi.org/10.1063/1.3583673
State	Published - 25 Apr 2011

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@article{40d5d41ec1b44cc1b736a4e33f10389a,

title = "Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes",

abstract = "We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.",

author = "Kaigui Zhu and Wu Wang and Qingyi Shao and Dongning Zhao and Yongfeng Lu and Natale Ianno",

year = "2011",

month = apr,

day = "25",

doi = "10.1063/1.3583673",

language = "英语",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

AU - Zhu, Kaigui

AU - Wang, Wu

AU - Shao, Qingyi

AU - Zhao, Dongning

AU - Lu, Yongfeng

AU - Ianno, Natale

PY - 2011/4/25

Y1 - 2011/4/25

N2 - We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

AB - We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

UR - https://www.scopus.com/pages/publications/79955686696

U2 - 10.1063/1.3583673

DO - 10.1063/1.3583673

M3 - 文章

AN - SCOPUS:79955686696

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 173110

ER -

Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

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