Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao; L. Fu; F. Wang; Y. Guo; Z. Y. Li; K. Peng; Li Li; Z. Li; Y. Wenas; S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao
, L. Fu
, F. Wang
, Y. Guo
, Z. Y. Li
, K. Peng
, Li Li
, Z. Li
, Y. Wenas
, S. Mokkapati
, H. H. Tan
, C. Jagadish

Australian National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	252-253
Number of pages	2
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038704
State	Published - 10 Feb 2014
Externally published	Yes
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

MOCVD
nanowire
selective area epitaxy
solar cell

Access to Document

10.1109/COMMAD.2014.7038704

Cite this

Gao, Q., Fu, L., Wang, F., Guo, Y., Li, Z. Y., Peng, K., Li, L., Li, Z., Wenas, Y., Mokkapati, S., Tan, H. H., & Jagadish, C. (2014). Selective area epitaxial growth of InP nanowire array for solar cell applications. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 252-253). Article 7038704 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038704

Gao, Q. ; Fu, L. ; Wang, F. et al. / Selective area epitaxial growth of InP nanowire array for solar cell applications. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 252-253 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

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title = "Selective area epitaxial growth of InP nanowire array for solar cell applications",

abstract = "InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.",

keywords = "MOCVD, nanowire, selective area epitaxy, solar cell",

author = "Q. Gao and L. Fu and F. Wang and Y. Guo and Li, \{Z. Y.\} and K. Peng and Li Li and Z. Li and Y. Wenas and S. Mokkapati and Tan, \{H. H.\} and C. Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038704",

language = "英语",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "252--253",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

address = "美国",

}

Gao, Q, Fu, L, Wang, F, Guo, Y, Li, ZY, Peng, K, Li, L, Li, Z, Wenas, Y, Mokkapati, S, Tan, HH & Jagadish, C 2014, Selective area epitaxial growth of InP nanowire array for solar cell applications. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038704, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 252-253, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications. / Gao, Q.; Fu, L.; Wang, F. et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 252-253 7038704 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Selective area epitaxial growth of InP nanowire array for solar cell applications

AU - Gao, Q.

AU - Fu, L.

AU - Wang, F.

AU - Guo, Y.

AU - Li, Z. Y.

AU - Peng, K.

AU - Li, Li

AU - Li, Z.

AU - Wenas, Y.

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

AB - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

KW - MOCVD

KW - nanowire

KW - selective area epitaxy

KW - solar cell

UR - https://www.scopus.com/pages/publications/84983201169

U2 - 10.1109/COMMAD.2014.7038704

DO - 10.1109/COMMAD.2014.7038704

M3 - 会议稿件

AN - SCOPUS:84983201169

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 252

EP - 253

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Gao Q, Fu L, Wang F, Guo Y, Li ZY, Peng K et al. Selective area epitaxial growth of InP nanowire array for solar cell applications. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 252-253. 7038704. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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