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Scaling law of anomalous Hall effect in Fe/Cu bilayers

  • W. J. Xu
  • , B. Zhang
  • , Z. Wang
  • , S. S. Chu
  • , W. Li
  • , Z. B. Wu
  • , R. H. Yu
  • , X. X. Zhang
  • Hong Kong University of Science and Technology
  • Tsinghua University

Research output: Contribution to journalArticlepeer-review

Abstract

The scaling of anomalous Hall resistivity on longitudinal resistivity has been intensively studied in different magnetic systems, including multilayer and granular films, to examine whether a skew scattering or a side jump mechanism dominates in the origin of anomalous Hall effect (AHE). The scaling law is based on the premise that both resistivities are a consequence of electron scattering by the imperfections in the materials. By studying the anomalous Hall effect in the simple Fe/Cu bilayers, it was demonstrated that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.

Original languageEnglish
Pages (from-to)233-237
Number of pages5
JournalEuropean Physical Journal B
Volume65
Issue number2
DOIs
StatePublished - Sep 2008
Externally publishedYes

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