S-band MMIC amplifier design using HEMT

Xuebin Yang; Shanwei Lu; Donglin Su

S-band MMIC amplifier design using HEMT

Xuebin Yang^*
, Shanwei Lu
, Donglin Su

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

Abstract

The design procedure of S-band monolithic microwave integrated circuit (MMIC) amplifier using high electron mobility transistor (HEMT) was proposed. The topology of the circuit was taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. The simulation results show that the design can meet the practical requirement.

Original language	English
Pages (from-to)	290-292
Number of pages	3
Journal	Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics
Volume	26
Issue number	3
State	Published - Jun 2000
Externally published	Yes

Cite this

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title = "S-band MMIC amplifier design using HEMT",

abstract = "The design procedure of S-band monolithic microwave integrated circuit (MMIC) amplifier using high electron mobility transistor (HEMT) was proposed. The topology of the circuit was taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. The simulation results show that the design can meet the practical requirement.",

author = "Xuebin Yang and Shanwei Lu and Donglin Su",

year = "2000",

month = jun,

language = "英语",

volume = "26",

pages = "290--292",

journal = "Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics",

issn = "1001-5965",

publisher = "Beijing University of Aeronautics and Astronautics (BUAA)",

number = "3",

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T1 - S-band MMIC amplifier design using HEMT

AU - Yang, Xuebin

AU - Lu, Shanwei

AU - Su, Donglin

PY - 2000/6

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N2 - The design procedure of S-band monolithic microwave integrated circuit (MMIC) amplifier using high electron mobility transistor (HEMT) was proposed. The topology of the circuit was taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. The simulation results show that the design can meet the practical requirement.

AB - The design procedure of S-band monolithic microwave integrated circuit (MMIC) amplifier using high electron mobility transistor (HEMT) was proposed. The topology of the circuit was taken into account in order to guarantee the stability. A 200Ω resistance is parallel with the drain port of HEMT. It lowers the gain and enlarges the noise of amplifier but ensures that the amplifier is absolutely stable. The simulation results show that the design can meet the practical requirement.

UR - https://www.scopus.com/pages/publications/0034202591

M3 - 文章

AN - SCOPUS:0034202591

SN - 1001-5965

VL - 26

SP - 290

EP - 292

JO - Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics

JF - Beijing Hangkong Hangtian Daxue Xuebao/Journal of Beijing University of Aeronautics and Astronautics

IS - 3

ER -

S-band MMIC amplifier design using HEMT

Abstract

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