TY - GEN
T1 - Room temperature 2D memristive transistor with optical short-term plasticity
AU - Xie, Xuejun
AU - Kang, Jiahao
AU - Gong, Yongji
AU - Ajayan, Pulickel M.
AU - Baneqee, Kaustav
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/1/23
Y1 - 2018/1/23
N2 - Memnstive devices with short-term plasticity (STP), gate tunabihty, site controllability, and light sensitivity have generated significant interest for wide range of applications, especially mimicking the neural network. However, there is still no memristive device that can accomplish all those goals in tandem at room temperature. To fill that void, in this work, lT-phase quantum dot superlattice is created on 2H-phase monolayer single crystal molybdenum disulfide (MoS2) back-gated field-effect transistor by focused electron beam irradiation. The quantum dots work as charge traps that induce memristive resistance. The memristive resistance can be controlled by applying gate bias and shows STP to light stimulation. Thus, this work demonstrates the first room temperature light sensitive memristive transistor that can serve as artificial retina device for artificial intelligence, and memnstive receiver for opticalelectncalneuromorphic interface.
AB - Memnstive devices with short-term plasticity (STP), gate tunabihty, site controllability, and light sensitivity have generated significant interest for wide range of applications, especially mimicking the neural network. However, there is still no memristive device that can accomplish all those goals in tandem at room temperature. To fill that void, in this work, lT-phase quantum dot superlattice is created on 2H-phase monolayer single crystal molybdenum disulfide (MoS2) back-gated field-effect transistor by focused electron beam irradiation. The quantum dots work as charge traps that induce memristive resistance. The memristive resistance can be controlled by applying gate bias and shows STP to light stimulation. Thus, this work demonstrates the first room temperature light sensitive memristive transistor that can serve as artificial retina device for artificial intelligence, and memnstive receiver for opticalelectncalneuromorphic interface.
UR - https://www.scopus.com/pages/publications/85045206126
U2 - 10.1109/IEDM.2017.8268332
DO - 10.1109/IEDM.2017.8268332
M3 - 会议稿件
AN - SCOPUS:85045206126
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 5.3.1-5.3.4
BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017
Y2 - 2 December 2017 through 6 December 2017
ER -