Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

Gaomin Xue; Zhixiang Zou; Liang Lin; Yizi Chang; Rui Ma; Ran Zhang; Deming Zhang; Yijiao Wang; Lang Zeng

doi:10.1109/TED.2022.3153273

Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

Gaomin Xue
, Zhixiang Zou
, Liang Lin
, Yizi Chang
, Rui Ma
, Ran Zhang
, Deming Zhang
, Yijiao Wang^*
, Lang Zeng^*

^*Corresponding author for this work

School of Integrated Circuit Science and Engineering

Beihang University
Boe Technology Corporation
China Research Institute of Film Science and Technology
Beihang Hangzhou Innovation Institute Yuhang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Mobility enhancement is an important research topic for amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) since it is directly related to the device's performance. The double-layer a-IGZO channel with quantum well structure was proposed for mobility enhancement. However, the impact of such double layers with the quantum well structure on a-IGZO TFT reliabilities, i.e., positive bias temperature stress (PBTS) and negative bias temperature illumination stress (NBTIS), is still elusive. In this work, the mobility enhancement by double layers with quantum well structures is proven to be robust in mass production Gen 8.5 line. Then, the a-IGZO TFT under PBTS and NBTIS is investigated systematically. The variations of mobility μ, subthreshold slope SS, and threshold voltage shift Δ Vth with PBTS and NBTIS stress time are evaluated and analyzed, respectively. It is shown that the double-layer a-IGZO channel with quantum well structure can sustain as good reliability performance as the reference single-layer device.

Original language	English
Pages (from-to)	1876-1882
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	4
DOIs	https://doi.org/10.1109/TED.2022.3153273
State	Published - 1 Apr 2022

Keywords

Amorphous InGaZnO (a-IGZO)
double layers
mobility enhancement
quantum well
reliability
thin-film transistor (TFT)

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10.1109/TED.2022.3153273

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title = "Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures",

abstract = "Mobility enhancement is an important research topic for amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) since it is directly related to the device's performance. The double-layer a-IGZO channel with quantum well structure was proposed for mobility enhancement. However, the impact of such double layers with the quantum well structure on a-IGZO TFT reliabilities, i.e., positive bias temperature stress (PBTS) and negative bias temperature illumination stress (NBTIS), is still elusive. In this work, the mobility enhancement by double layers with quantum well structures is proven to be robust in mass production Gen 8.5 line. Then, the a-IGZO TFT under PBTS and NBTIS is investigated systematically. The variations of mobility μ, subthreshold slope SS, and threshold voltage shift Δ Vth with PBTS and NBTIS stress time are evaluated and analyzed, respectively. It is shown that the double-layer a-IGZO channel with quantum well structure can sustain as good reliability performance as the reference single-layer device.",

keywords = "Amorphous InGaZnO (a-IGZO), double layers, mobility enhancement, quantum well, reliability, thin-film transistor (TFT)",

author = "Gaomin Xue and Zhixiang Zou and Liang Lin and Yizi Chang and Rui Ma and Ran Zhang and Deming Zhang and Yijiao Wang and Lang Zeng",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

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doi = "10.1109/TED.2022.3153273",

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T1 - Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

AU - Xue, Gaomin

AU - Zou, Zhixiang

AU - Lin, Liang

AU - Chang, Yizi

AU - Ma, Rui

AU - Zhang, Ran

AU - Zhang, Deming

AU - Wang, Yijiao

AU - Zeng, Lang

PY - 2022/4/1

Y1 - 2022/4/1

N2 - Mobility enhancement is an important research topic for amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) since it is directly related to the device's performance. The double-layer a-IGZO channel with quantum well structure was proposed for mobility enhancement. However, the impact of such double layers with the quantum well structure on a-IGZO TFT reliabilities, i.e., positive bias temperature stress (PBTS) and negative bias temperature illumination stress (NBTIS), is still elusive. In this work, the mobility enhancement by double layers with quantum well structures is proven to be robust in mass production Gen 8.5 line. Then, the a-IGZO TFT under PBTS and NBTIS is investigated systematically. The variations of mobility μ, subthreshold slope SS, and threshold voltage shift Δ Vth with PBTS and NBTIS stress time are evaluated and analyzed, respectively. It is shown that the double-layer a-IGZO channel with quantum well structure can sustain as good reliability performance as the reference single-layer device.

AB - Mobility enhancement is an important research topic for amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) since it is directly related to the device's performance. The double-layer a-IGZO channel with quantum well structure was proposed for mobility enhancement. However, the impact of such double layers with the quantum well structure on a-IGZO TFT reliabilities, i.e., positive bias temperature stress (PBTS) and negative bias temperature illumination stress (NBTIS), is still elusive. In this work, the mobility enhancement by double layers with quantum well structures is proven to be robust in mass production Gen 8.5 line. Then, the a-IGZO TFT under PBTS and NBTIS is investigated systematically. The variations of mobility μ, subthreshold slope SS, and threshold voltage shift Δ Vth with PBTS and NBTIS stress time are evaluated and analyzed, respectively. It is shown that the double-layer a-IGZO channel with quantum well structure can sustain as good reliability performance as the reference single-layer device.

KW - Amorphous InGaZnO (a-IGZO)

KW - double layers

KW - mobility enhancement

KW - quantum well

KW - reliability

KW - thin-film transistor (TFT)

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U2 - 10.1109/TED.2022.3153273

DO - 10.1109/TED.2022.3153273

M3 - 文章

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SN - 0018-9383

VL - 69

SP - 1876

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

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