Review on Shear Strength and Reliability of Nanoparticle Sintered Joints for Power Electronics Packaging

The rapid development of the third-generation semiconductors has posed new requirements and challenges for power electronic packaging. In recent years, the utilization of nano-Ag and Cu sintering has emerged as a promising solution for third-generation semiconductor packaging. Sintered Ag demonstrates remarkable thermal conductivity and exceptional oxidation resistance, while sintered Cu offers economic benefits and superior electromigration resistance compared to sintered Ag. This work reviews the bonding process of Ag and Cu nanoparticles for power electronics packaging, and the shear strength and reliability of sintered joints. The influence of material properties, encompassing particle size, shape, and composition, along with critical sintering parameters such as temperature, pressure, and duration is discussed. Additionally, the pivotal role played by the metallization layer for the sintered bonding process is evaluated. Various reliability test results are summarized and analyzed focusing on their affecting factors. Furthermore, this review explores the broader landscape by delving into the opportunities and challenges posed by sintered Ag and Cu in the realm of power electronic packaging.