Research on Vulnerable Regions of MEMS Sensors Based on Multi-Physics Coupling Simulation

Capacitive MEMS sensors with silicon microstructures exhibit high sensitivity, low noise, and low power consumption, making them widely applicable in various markets. To further enhance their reliability and identify potential failure mechanisms, this study focuses on the MAX53X accelerometer as a research subject. A device physical model was established to perform multi-physics coupling simulations, aiming to analyze vulnerable regions. Simulation results reveal that under electro-thermo-mechanical coupled stress, stress concentrations occur at solder joints, bonding necks, the roots of spring structures in micromechanical mechanisms, structure-chip interfaces, and geometric corners. These stress concentrations may exceed the yield limit, leading to potential failures. This research provides valuable insights for the structural design and optimization of MEMS sensors.