Research on the transmission and coupling issue of multilayer TSV and multilayer TSV array

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Since more chips are fabricated within 3D-IC, the single layer TSV cannot satisfy the requirement. Hence, the multilayer TSV structure was proposed, and the influence of different bump radius, bump height, underfill material in the intermetallic layer on the TSV performance was studied. In reality, multilayer TSV array is applied in the product. Therefore two multilayer 4 × 4 TSV arrays have been proposed with different GS distribution. The coupling analysis was performed and the effect of ground TSV was studied.

Original languageEnglish
Title of host publication2015 IEEE 6th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages674-677
Number of pages4
ISBN (Electronic)9781467374415
DOIs
StatePublished - 12 Jul 2016
Event6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015 - Shanghai, China
Duration: 28 Oct 201530 Oct 2015

Publication series

Name2015 IEEE 6th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015

Conference

Conference6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
Country/TerritoryChina
CityShanghai
Period28/10/1530/10/15

Keywords

  • 3D integration
  • multilayer TSV
  • multilayer TSV array
  • through silicon via (TSV)

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