@inproceedings{cb943070de19495ab30941e2180f0854,
title = "Research on Electrical Characteristics of CMOS Device at Cryogenic Temperature",
abstract = "CMOS device is widely used in digital circuits due to its superior performance. Under the space cryogenic temperature environment, the physical parameters of the CMOS device will be significantly transformed, and the electrical characteristics may be abnormal. Nevertheless, the standard operating temperature range of microelectronic components specified in the conventional standard is -55 to 125°C, which cannot satisfy the requirements of space applications. This paper emphasizes on the simulation and experimental methods to study for CMOS device operating under cryogenic temperature condition. And it studies the influences of cryogenic temperature on the electrical characteristics of the CMOS device.",
keywords = "CMOS device, cryogenic temperature, electrical characteristics, experiment, modeling",
author = "Hongyan Leng and Guicui Fu and Maogong Jiang and Bo Wan and Zhongqing Zhang",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 12th International Conference on Reliability, Maintainability, and Safety, ICRMS 2018 ; Conference date: 17-10-2018 Through 19-10-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.1109/ICRMS.2018.00056",
language = "英语",
series = "Proceedings - 12th International Conference on Reliability, Maintainability, and Safety, ICRMS 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "262--265",
booktitle = "Proceedings - 12th International Conference on Reliability, Maintainability, and Safety, ICRMS 2018",
address = "美国",
}