TY - GEN
T1 - Reliability optimization of gold-tin eutectic die attach layer in HEMT package
AU - Zhang, Hao
AU - Fan, Jiajie
AU - Zhang, Jing
AU - Qian, Cheng
AU - Fan, Xuejun
AU - Sun, Fenglian
AU - Zhang, Guoqi
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/1/3
Y1 - 2017/1/3
N2 - This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA). The effects of die attach layer's standoff height and thickness of substrate on fatigue damage accumulation was discussed. The results show that increasing the standoff height of the die attach layer is an effective way to prevent the early crack initiation in gold-tin die attach layer especially for a gallium nitride (GaN) die. It is also indicated that for a GaN die, a thicker die attach layer and a thinner substrate are preferable in order to retain a comparable lifetime with silicon (Si) die and Cu substrate system.
AB - This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA). The effects of die attach layer's standoff height and thickness of substrate on fatigue damage accumulation was discussed. The results show that increasing the standoff height of the die attach layer is an effective way to prevent the early crack initiation in gold-tin die attach layer especially for a gallium nitride (GaN) die. It is also indicated that for a GaN die, a thicker die attach layer and a thinner substrate are preferable in order to retain a comparable lifetime with silicon (Si) die and Cu substrate system.
UR - https://www.scopus.com/pages/publications/85011024383
U2 - 10.1109/SSLCHINA.2016.7804349
DO - 10.1109/SSLCHINA.2016.7804349
M3 - 会议稿件
AN - SCOPUS:85011024383
T3 - Conference Proceedings - 2016 13th China International Forum on Solid State Lighting, SSLCHINA 2016
SP - 52
EP - 56
BT - Conference Proceedings - 2016 13th China International Forum on Solid State Lighting, SSLCHINA 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 13th China International Forum on Solid State Lighting, SSLCHINA 2016
Y2 - 15 November 2016 through 17 November 2016
ER -