Reliability evaluation of microelectronic device based on PoF

This paper puts forward a method to evaluate the reliability of microelectronic devices based on the theories of Physics of Failure (PoF), taking into account the different stress types and stress levels in application for microelectronic devices. Failure modes, mechanisms and effects analysis (FMMEA) is conducted to achieve the potential failure mechanisms and physics models based on the information of microelectronic devices during design, manufacture and application. The temperature, stress and electrical parameters under different stress levels are obtained by modeling and simulation. The matrix of time-to-failure of each unit is obtained by the failure physics models, cumulative damage theory and random sampling algorithm. Then the competing failure mode is applied to acquire the time-to-failure of MOS devices in working condition. The practice proves that this method is less time consuming, more efficiently, and costs less to evaluate the reliability of the microelectronic device under complex environments.