Regulating the Metallic Cu–Ga Bond by S Vacancy for Improved Photocatalytic CO₂ Reduction to C₂H₄

Artificial photosynthesis, which converts carbon dioxide into hydrocarbon fuels, is a promising strategy to overcome both global warming and energy crisis. Herein, the geometric position of Cu and Ga on ultra-thin CuGaS₂/Ga₂S₃ is oriented via a sulfur defect engineering, and the unprecedented C₂H₄ yield selectivity is ≈93.87% and yield is ≈335.67 µmol g⁻¹ h⁻¹. A highly delocalized electron distribution intensity induced by S vacancy indicates that Cu and Ga adjacent to S vacancy form Cu–Ga metallic bond, which accelerates the photocatalytic reduction of CO₂ to C₂H₄. The stability of the crucial intermediates (*CHOHCO) is attributed to the upshift of the d-band center of ultra-thin CGS/GS. The C–C coupling barrier is intrinsically reduced by the dominant exposed Cu atoms on the 2D ultra-thin CuGaS₂/Ga₂S₃ in the process of photocatalytic CO₂ reduction, which captures *CO molecules effectively. This study proposes a new strategy to design photocatalyst through defect engineering to adjust the selectivity of photocatalytic CO₂ reduction.