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Rectifying properties of the La2CuO4/Nb-0.7 wt%-doped SrTiO3 heterojunction

  • Jin Fang*
  • , Yimin Cui
  • , Yong Zhang
  • , Ming Qiu
  • *Corresponding author for this work
  • Beijing Jiaotong University
  • CAS - Institute of Electrical Engineering

Research output: Contribution to journalArticlepeer-review

Abstract

Using a two-step growth technique, simple oxide heterostructures have been fabricated by pulsed laser depositing epitaxial La2CuO4 (LCO) thin films on Nb-0.7 wt%-doped SrTiO3 (NSTO) substrates. The junctions show good rectifying behavior at all measuring temperatures and an obvious temperature dependence of current-voltage (I-V) properties in the range of 25-300 K, which are discussed in relation to the p-n model.

Original languageEnglish
Pages (from-to)51-53
Number of pages3
JournalPhysica C: Superconductivity and its Applications
Volume458
Issue number1-2
DOIs
StatePublished - 1 Jul 2007

Keywords

  • LaCuO
  • Nb-doped SrTiO
  • p-n Junction

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