Skip to main navigation Skip to search Skip to main content

Realization of topological Mott insulator in a twisted bilayer graphene lattice model

  • Bin Bin Chen
  • , Yuan Da Liao
  • , Ziyu Chen
  • , Oskar Vafek
  • , Jian Kang*
  • , Wei Li*
  • , Zi Yang Meng*
  • *Corresponding author for this work
  • The University of Hong Kong
  • CAS - Institute of Physics
  • University of Chinese Academy of Sciences
  • Beihang University
  • Florida State University
  • National High Magnetic Field Laboratory
  • Soochow University
  • CAS - Institute of Theoretical Physics

Research output: Contribution to journalArticlepeer-review

Abstract

Magic-angle twisted bilayer graphene has recently become a thriving material platform realizing correlated electron phenomena taking place within its topological flat bands. Several numerical and analytical methods have been applied to understand the correlated phases therein, revealing some similarity with the quantum Hall physics. In this work, we provide a Mott-Hubbard perspective for the TBG system. Employing the large-scale density matrix renormalization group on the lattice model containing the projected Coulomb interactions only, we identify a first-order quantum phase transition between the insulating stripe phase and the quantum anomalous Hall state with the Chern number of ±1. Our results not only shed light on the mechanism of the quantum anomalous Hall state discovered at three-quarters filling, but also provide an example of the topological Mott insulator, i.e., the quantum anomalous Hall state in the strong coupling limit.

Original languageEnglish
Article number5480
JournalNature Communications
Volume12
Issue number1
DOIs
StatePublished - 1 Dec 2021

Fingerprint

Dive into the research topics of 'Realization of topological Mott insulator in a twisted bilayer graphene lattice model'. Together they form a unique fingerprint.

Cite this