TY - GEN
T1 - Random interface trap induced fluctuation in 22nm high-k/metal gate junctionless and inversion-mode FinFETs
AU - Wang, Yijiao
AU - Wei, Kangliang
AU - Liu, Xiaoyan
AU - Du, Gang
AU - Kang, Jinfeng
PY - 2013
Y1 - 2013
N2 - The impact of random interface trap (RIT) on the junctionless MOSFET (JL-FET) is investigated. Both acceptor-like and donor-like interface traps are considered to 22nm high-k metal gate (HKMG) junctionless structure and traditional inversion-mode FinFET. Fluctuations in threshold voltage, on current, leakage current, drain induced barrier lowering and subthreshold swing are analyzed. The results show that the position effect and type of interface traps (ITs) can induce different fluctuation for JL-FET and FinFET.
AB - The impact of random interface trap (RIT) on the junctionless MOSFET (JL-FET) is investigated. Both acceptor-like and donor-like interface traps are considered to 22nm high-k metal gate (HKMG) junctionless structure and traditional inversion-mode FinFET. Fluctuations in threshold voltage, on current, leakage current, drain induced barrier lowering and subthreshold swing are analyzed. The results show that the position effect and type of interface traps (ITs) can induce different fluctuation for JL-FET and FinFET.
UR - https://www.scopus.com/pages/publications/84881159914
U2 - 10.1109/VLSI-TSA.2013.6545647
DO - 10.1109/VLSI-TSA.2013.6545647
M3 - 会议稿件
AN - SCOPUS:84881159914
SN - 9781467330817
T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
BT - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
T2 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Y2 - 22 April 2013 through 24 April 2013
ER -