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Raman spectroscopy study of low energy He+ ion irradiation effect in graphene transferred onto SiO2

  • Université Paris-Saclay

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We studied the low energy (5.4 keV) He+ ion irradiation effect on the properties of chemical vapor deposited graphene transferred onto SiO 2/Si substrate. For a small dose density of 4 × 1012 He +/cm2, both the G and 2D bands in the Raman spectra exhibit blue-shift and the intensity ratio of the 2D and G peaks decreases. The intensity ratio of the D and G peaks increases a lot as the dose density is larger than 1.2 × 1013 He+/cm2. It suggests that before the formation of large amount of defects, low energy He+ ion irradiation may induce charge-transfer doping in graphene due to the presence of polymer residues. Broad spatial distributions of the band shift and the intensity ratio indicate inhomogeneity of doping level in graphene.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages903-906
Number of pages4
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 5 Aug 20138 Aug 2013

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/TerritoryChina
CityBeijing
Period5/08/138/08/13

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