Raman scattering from InAs nanocrystals embedded in SiO2 thin films

Kai Gui Zhu; Jian Zhong Shi; Qing Y.I. Shao

Raman scattering from InAs nanocrystals embedded in SiO₂ thin films

Kai Gui Zhu^*
, Jian Zhong Shi
, Qing Y.I. Shao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Raman scattering from InAs nanocrystals embedded in SiO₂ thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red-shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO₂ matrix was also taken into account to interpret the red shift.

Original language	English
Pages (from-to)	2306
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	49
Issue number	11
State	Published - Nov 2000
Externally published	Yes

Keywords

InAs quantum dots
Raman scattering
SiO thin films

Cite this

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title = "Raman scattering from InAs nanocrystals embedded in SiO2 thin films",

abstract = "Raman scattering from InAs nanocrystals embedded in SiO2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red-shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO2 matrix was also taken into account to interpret the red shift.",

keywords = "InAs quantum dots, Raman scattering, SiO thin films",

author = "Zhu, \{Kai Gui\} and Shi, \{Jian Zhong\} and Shao, \{Qing Y.I.\}",

year = "2000",

month = nov,

language = "英语",

volume = "49",

pages = "2306",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

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TY - JOUR

T1 - Raman scattering from InAs nanocrystals embedded in SiO2 thin films

AU - Zhu, Kai Gui

AU - Shi, Jian Zhong

AU - Shao, Qing Y.I.

PY - 2000/11

Y1 - 2000/11

N2 - Raman scattering from InAs nanocrystals embedded in SiO2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red-shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO2 matrix was also taken into account to interpret the red shift.

AB - Raman scattering from InAs nanocrystals embedded in SiO2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red-shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO2 matrix was also taken into account to interpret the red shift.

KW - InAs quantum dots

KW - Raman scattering

KW - SiO thin films

UR - https://www.scopus.com/pages/publications/0041682773

M3 - 文章

AN - SCOPUS:0041682773

SN - 1000-3290

VL - 49

SP - 2306

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 11

ER -

Raman scattering from InAs nanocrystals embedded in SiO₂ thin films

Abstract

Keywords

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