Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems

Tingrui Ren; Xvpeng Han; Kexin Yao; Huimeng Guo; Liang Wang; Yuanfu Zhao; Bi Wang

doi:10.1109/ICREED65908.2025.11036223

Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems

Tingrui Ren
, Xvpeng Han
, Kexin Yao
, Huimeng Guo
, Liang Wang
, Yuanfu Zhao
, Bi Wang

Beihang University
Beijing Microelectronics Technology Institute
Hangzhou Dianzi University
School of Transportation Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

RRAM-based in-memory computing architectures offer ultra-high energy efficiency for matrixvector multiplication (MVM), making them highly suitable for large-scale neural network algorithms. However, the radiation tolerance of neuromorphic computing systems has not been comprehensively assessed. This study explores the sensitivity of RRAM-based in-memory computing architectures to singleevent effects (SEE) and total ionizing dose (TID) during the inference phase. By incorporating radiation-induced conductance error models into each inference simulation, based on weight mapping rules, we analyze the impact of radiation on the inference accuracy of various neural network models. The results demonstrate that RRAM-based in-memory computing systems can effectively withstand a TID up to 30 Mrad.

Original language	English
Title of host publication	2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331549299
DOIs	https://doi.org/10.1109/ICREED65908.2025.11036223
State	Published - 2025
Externally published	Yes
Event	6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025 - Yangzhou, China Duration: 16 Apr 2025 → 18 Apr 2025

Publication series

Name	2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025

Conference

Conference	6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025
Country/Territory	China
City	Yangzhou
Period	16/04/25 → 18/04/25

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

In-memory computing (IMC)
neuromorphic computing
single-event effects (SEE)
total ionizing dose (TID)

Access to Document

10.1109/ICREED65908.2025.11036223

Cite this

Ren, T., Han, X., Yao, K., Guo, H., Wang, L., Zhao, Y., & Wang, B. (2025). Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems. In 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025 (2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICREED65908.2025.11036223

Ren, Tingrui ; Han, Xvpeng ; Yao, Kexin et al. / Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems. 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025).

@inproceedings{d336e39868ba43f48f4c49748aecd28c,

title = "Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems",

abstract = "RRAM-based in-memory computing architectures offer ultra-high energy efficiency for matrixvector multiplication (MVM), making them highly suitable for large-scale neural network algorithms. However, the radiation tolerance of neuromorphic computing systems has not been comprehensively assessed. This study explores the sensitivity of RRAM-based in-memory computing architectures to singleevent effects (SEE) and total ionizing dose (TID) during the inference phase. By incorporating radiation-induced conductance error models into each inference simulation, based on weight mapping rules, we analyze the impact of radiation on the inference accuracy of various neural network models. The results demonstrate that RRAM-based in-memory computing systems can effectively withstand a TID up to 30 Mrad.",

keywords = "In-memory computing (IMC), neuromorphic computing, single-event effects (SEE), total ionizing dose (TID)",

author = "Tingrui Ren and Xvpeng Han and Kexin Yao and Huimeng Guo and Liang Wang and Yuanfu Zhao and Bi Wang",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025 ; Conference date: 16-04-2025 Through 18-04-2025",

year = "2025",

doi = "10.1109/ICREED65908.2025.11036223",

language = "英语",

series = "2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025",

address = "美国",

}

Ren, T, Han, X, Yao, K, Guo, H, Wang, L, Zhao, Y & Wang, B 2025, Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems. in 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025. 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025, Institute of Electrical and Electronics Engineers Inc., 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025, Yangzhou, China, 16/04/25. https://doi.org/10.1109/ICREED65908.2025.11036223

Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems. / Ren, Tingrui; Han, Xvpeng; Yao, Kexin et al.
2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025. Institute of Electrical and Electronics Engineers Inc., 2025. (2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems

AU - Ren, Tingrui

AU - Han, Xvpeng

AU - Yao, Kexin

AU - Guo, Huimeng

AU - Wang, Liang

AU - Zhao, Yuanfu

AU - Wang, Bi

PY - 2025

Y1 - 2025

N2 - RRAM-based in-memory computing architectures offer ultra-high energy efficiency for matrixvector multiplication (MVM), making them highly suitable for large-scale neural network algorithms. However, the radiation tolerance of neuromorphic computing systems has not been comprehensively assessed. This study explores the sensitivity of RRAM-based in-memory computing architectures to singleevent effects (SEE) and total ionizing dose (TID) during the inference phase. By incorporating radiation-induced conductance error models into each inference simulation, based on weight mapping rules, we analyze the impact of radiation on the inference accuracy of various neural network models. The results demonstrate that RRAM-based in-memory computing systems can effectively withstand a TID up to 30 Mrad.

AB - RRAM-based in-memory computing architectures offer ultra-high energy efficiency for matrixvector multiplication (MVM), making them highly suitable for large-scale neural network algorithms. However, the radiation tolerance of neuromorphic computing systems has not been comprehensively assessed. This study explores the sensitivity of RRAM-based in-memory computing architectures to singleevent effects (SEE) and total ionizing dose (TID) during the inference phase. By incorporating radiation-induced conductance error models into each inference simulation, based on weight mapping rules, we analyze the impact of radiation on the inference accuracy of various neural network models. The results demonstrate that RRAM-based in-memory computing systems can effectively withstand a TID up to 30 Mrad.

KW - In-memory computing (IMC)

KW - neuromorphic computing

KW - single-event effects (SEE)

KW - total ionizing dose (TID)

UR - https://www.scopus.com/pages/publications/105010197440

U2 - 10.1109/ICREED65908.2025.11036223

DO - 10.1109/ICREED65908.2025.11036223

M3 - 会议稿件

AN - SCOPUS:105010197440

T3 - 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025

BT - 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025

Y2 - 16 April 2025 through 18 April 2025

ER -

Ren T, Han X, Yao K, Guo H, Wang L, Zhao Y et al. Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems. In 2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025. Institute of Electrical and Electronics Engineers Inc. 2025. (2025 6th International Conference on Radiation Effects of Electronic Devices, ICREED 2025). doi: 10.1109/ICREED65908.2025.11036223

Radiation Effects Modeling and Analysis in RRAM-Based In-Memory Computing Systems

Abstract

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UN SDGs

Keywords

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