Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "ailing-Channel" in Organic Barrier

Shiheng Liang; Zhongwei Yu; Xavier Devaux; Anthony Ferri; Weichuan Huang; Huaiwen Yang; Rachel Desfeux; Xiaoguang Li; Sylvie Migot; Debapriya Chaudhuri; Hongxin Yang; Mairbek Chshiev; Changping Yang; Bin Zhou; Jinghuai Fang; Stéphane Mangin; Yuan Lu

doi:10.1021/acsami.8b11437

Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "ailing-Channel" in Organic Barrier

Shiheng Liang
, Zhongwei Yu
, Xavier Devaux
, Anthony Ferri
, Weichuan Huang
, Huaiwen Yang
, Rachel Desfeux
, Xiaoguang Li
, Sylvie Migot
, Debapriya Chaudhuri
, Hongxin Yang
, Mairbek Chshiev
, Changping Yang
, Bin Zhou
, Jinghuai Fang
, Stéphane Mangin
, Yuan Lu^*

^*Corresponding author for this work

Université de Lorraine
Hubei University
Nantong University
Université d'Artois
University of Science and Technology of China
Université Grenoble Alpes
CAS - Ningbo Institute of Material Technology and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing-channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La_0.6Sr_0.4MnO₃/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface".

Original language	English
Pages (from-to)	30614-30622
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	36
DOIs	https://doi.org/10.1021/acsami.8b11437
State	Published - 12 Sep 2018
Externally published	Yes

Keywords

organic multiferroic tunnel junctions
spin polarization
spinterface
tunneling magneto-resistance

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10.1021/acsami.8b11437

Cite this

Liang, S., Yu, Z., Devaux, X., Ferri, A., Huang, W., Yang, H., Desfeux, R., Li, X., Migot, S., Chaudhuri, D., Yang, H., Chshiev, M., Yang, C., Zhou, B., Fang, J., Mangin, S., & Lu, Y. (2018). Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "ailing-Channel" in Organic Barrier. ACS Applied Materials and Interfaces, 10(36), 30614-30622. https://doi.org/10.1021/acsami.8b11437

@article{385f2244b22745d080994485b033f8a0,

title = "Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric {"}ailing-Channel{"} in Organic Barrier",

abstract = "The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric {"}ailing-channel{"} in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce {"}ailing-channels{"} that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric {"}ailing-channels{"} is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of {"}spinterface{"}.",

keywords = "organic multiferroic tunnel junctions, spin polarization, spinterface, tunneling magneto-resistance",

author = "Shiheng Liang and Zhongwei Yu and Xavier Devaux and Anthony Ferri and Weichuan Huang and Huaiwen Yang and Rachel Desfeux and Xiaoguang Li and Sylvie Migot and Debapriya Chaudhuri and Hongxin Yang and Mairbek Chshiev and Changping Yang and Bin Zhou and Jinghuai Fang and St{\'e}phane Mangin and Yuan Lu",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = sep,

day = "12",

doi = "10.1021/acsami.8b11437",

language = "英语",

volume = "10",

pages = "30614--30622",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "36",

}

Liang, S, Yu, Z, Devaux, X, Ferri, A, Huang, W, Yang, H, Desfeux, R, Li, X, Migot, S, Chaudhuri, D, Yang, H, Chshiev, M, Yang, C, Zhou, B, Fang, J, Mangin, S & Lu, Y 2018, 'Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "ailing-Channel" in Organic Barrier', ACS Applied Materials and Interfaces, vol. 10, no. 36, pp. 30614-30622. https://doi.org/10.1021/acsami.8b11437

TY - JOUR

T1 - Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "ailing-Channel" in Organic Barrier

AU - Liang, Shiheng

AU - Yu, Zhongwei

AU - Devaux, Xavier

AU - Ferri, Anthony

AU - Huang, Weichuan

AU - Yang, Huaiwen

AU - Desfeux, Rachel

AU - Li, Xiaoguang

AU - Migot, Sylvie

AU - Chaudhuri, Debapriya

AU - Yang, Hongxin

AU - Chshiev, Mairbek

AU - Yang, Changping

AU - Zhou, Bin

AU - Fang, Jinghuai

AU - Mangin, Stéphane

AU - Lu, Yuan

PY - 2018/9/12

Y1 - 2018/9/12

N2 - The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing-channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface".

AB - The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing-channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface".

KW - organic multiferroic tunnel junctions

KW - spin polarization

KW - spinterface

KW - tunneling magneto-resistance

UR - https://www.scopus.com/pages/publications/85052732124

U2 - 10.1021/acsami.8b11437

DO - 10.1021/acsami.8b11437

M3 - 文章

C2 - 30125490

AN - SCOPUS:85052732124

SN - 1944-8244

VL - 10

SP - 30614

EP - 30622

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 36

ER -

Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "ailing-Channel" in Organic Barrier

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