Quantum transport in carbon nanotube transistors: Complex band structure effects

T. S. Xia; L. F. Register; S. K. Banerjee

doi:10.1063/1.1631747

Quantum transport in carbon nanotube transistors: Complex band structure effects

T. S. Xia^*
, L. F. Register
, S. K. Banerjee

^*Corresponding author for this work

University of Texas at Austin

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The impact of complex band structure on the subthreshold current behavior of CNTFETs was reported. In the upper subthreshold region and ON state, the simulation results from the quantum transport and semiclassical model were comparable. From the calculations, the on-off current ratio of the 10 nm CNTFET was of the order of 10⁴. This result show that nanoscale CNTFETs could exhibit more significant and qualitative different behavior of subthreshold leakage current as compared to that of their Si-based counterparts.

Original language	English
Pages (from-to)	1597-1599
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	3
DOIs	https://doi.org/10.1063/1.1631747
State	Published - 1 Feb 2004
Externally published	Yes

Access to Document

10.1063/1.1631747

Cite this

@article{1c637ee130e84ca589bb07fc5011090f,

title = "Quantum transport in carbon nanotube transistors: Complex band structure effects",

abstract = "The impact of complex band structure on the subthreshold current behavior of CNTFETs was reported. In the upper subthreshold region and ON state, the simulation results from the quantum transport and semiclassical model were comparable. From the calculations, the on-off current ratio of the 10 nm CNTFET was of the order of 104. This result show that nanoscale CNTFETs could exhibit more significant and qualitative different behavior of subthreshold leakage current as compared to that of their Si-based counterparts.",

author = "Xia, \{T. S.\} and Register, \{L. F.\} and Banerjee, \{S. K.\}",

year = "2004",

month = feb,

day = "1",

doi = "10.1063/1.1631747",

language = "英语",

volume = "95",

pages = "1597--1599",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Quantum transport in carbon nanotube transistors

T2 - Complex band structure effects

AU - Xia, T. S.

AU - Register, L. F.

AU - Banerjee, S. K.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - The impact of complex band structure on the subthreshold current behavior of CNTFETs was reported. In the upper subthreshold region and ON state, the simulation results from the quantum transport and semiclassical model were comparable. From the calculations, the on-off current ratio of the 10 nm CNTFET was of the order of 104. This result show that nanoscale CNTFETs could exhibit more significant and qualitative different behavior of subthreshold leakage current as compared to that of their Si-based counterparts.

AB - The impact of complex band structure on the subthreshold current behavior of CNTFETs was reported. In the upper subthreshold region and ON state, the simulation results from the quantum transport and semiclassical model were comparable. From the calculations, the on-off current ratio of the 10 nm CNTFET was of the order of 104. This result show that nanoscale CNTFETs could exhibit more significant and qualitative different behavior of subthreshold leakage current as compared to that of their Si-based counterparts.

UR - https://www.scopus.com/pages/publications/1142268099

U2 - 10.1063/1.1631747

DO - 10.1063/1.1631747

M3 - 文章

AN - SCOPUS:1142268099

SN - 0021-8979

VL - 95

SP - 1597

EP - 1599

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Quantum transport in carbon nanotube transistors: Complex band structure effects

Abstract

Access to Document

Other files and links

Fingerprint

Cite this