Abstract
Wurtzite structured materials such as InN, CaN, ZnO, and CdSe simultaneously possess piezoelectric, semiconducting, and photoexcitation properties. The piezo-phototronic effect utilizes the piezo-polarization charges induced in the vicinity of the interface/junction to regulate the energy band diagrams and modulate charge carriers in the optoelectronic processes, such as transport, generation, recombination, and separation. This article reviews recent progress in piezo-phototronic effect enhanced photodetectors, starting from the fundamental physics, following the development from a single nanowire device to a large-scale photodetector array for illumination imaging. The piezo-phototronic effect provides a promising approach to improve the performance of the wurtzite structured material-based photodetectors. It may have potential applications in optical communication, optoelectronic devices, and multifunctional computing systems.
| Original language | English |
|---|---|
| Pages (from-to) | 11341-11354 |
| Number of pages | 14 |
| Journal | Journal of Materials Chemistry C |
| Volume | 4 |
| Issue number | 48 |
| DOIs | |
| State | Published - 2016 |
| Externally published | Yes |
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