@inproceedings{cb6ca58000f44c0dbb5d504a85130d98,
title = "Process and Design Considerations for Spin Orbit Torque MRAM",
abstract = "Spin-orbit torque magnetic random access memory (SOT-MRAM) is widely recognized as a promising candidate for the next generation of high-performance nonvolatile memory solutions. Although characterized by its ultrafast operation speed and exceptional reliability, SOTMRAM presents significant challenges in fabrication process and circuit design due to its three-terminal topology and toppinned nano-pillar stack structure. In this invited paper, we provide a review of our recent advancements in the development of SOT-MRAM. Key issues concerning the process and design of SOT-MRAM are thoroughly discussed, meanwhile detailed optimization strategies and improvements are presented.",
keywords = "circuit design, fabrication process, magnetic random access memory, spin-orbit torque",
author = "Zhaohao Wang and Chao Wang and Min Wang and Chenyi Wang and Kaihua Cao and Chenlin Xu and Cong Zhang and Yunpeng Li and Liu, \{Hong Xi\}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 20th IEEE Asia Pacific Conference on Circuits and Systems and IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics Electronics, APCCAS and PrimeAsia 2024 ; Conference date: 07-11-2024 Through 09-11-2024",
year = "2024",
doi = "10.1109/APCCAS62602.2024.10808875",
language = "英语",
series = "APCCAS and PrimeAsia 2024 - 2024 IEEE 20th Asia Pacific Conference on Circuits and Systems and IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics Electronics, Proceeding",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "135--139",
booktitle = "APCCAS and PrimeAsia 2024 - 2024 IEEE 20th Asia Pacific Conference on Circuits and Systems and IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics Electronics, Proceeding",
address = "美国",
}