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Probing plastic and adhesive self-healing interface using in situ electrochemical atomic force microscopy for high-rate Si/C anode

  • Qipeng Zhang
  • , Rui Li
  • , Jiewen Li
  • , Yaonan Cai
  • , Di Ma
  • , Jiayu Yu
  • , Shuai Li
  • , Haodong Zhang
  • , Shichao Zhang
  • , Bohua Wen*
  • *Corresponding author for this work
  • Tsinghua University
  • Virginia Polytechnic Institute and State University
  • Beihang University

Research output: Contribution to journalArticlepeer-review

Abstract

There are many recent strategies using self-healing functionality to effectively address the chemo-mechanical interface evolution and extend battery performance. Revealing how the mechanical properties affect interface stability is important but challenging. Here, taking a self-healing Ga-interface-encapsulated Si/C as a model, we perform electrochemical atomic force microscopy to probe the mechanical properties of the shallow interface (<30 nm) upon cycling. Instead of bearing a high Young's modulus, the Ga-Si/C interface exhibits distinctive plastic deformation and adhesion features related to the liquid-to-solid transition. In quantitative analysis using a plastic index, the Ga layer sustains a pronounced degree of plastic deformation, in sharp contrast to the neat Si/C. We also identify the maximum adhesion for liquid and semi-solid Ga, which forms a heterogeneous but continuous network. COMSOL modeling corroborates the plastic deformation and adhesion, effectively alleviating the local stress at the interface and accommodating the dynamic solid-electrolyte interface evolution.

Original languageEnglish
Article number102000
JournalCell Reports Physical Science
Volume5
Issue number6
DOIs
StatePublished - 19 Jun 2024

Keywords

  • adaptive interface
  • adhesion
  • AFM
  • interface
  • interface stress
  • mechanical property
  • plastic deformation
  • self-healing interface

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