Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering

Hai Jiao Zhao; Cong Wang; Xiao Guang Shi; Xun Gang Diao

Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering

Hai Jiao Zhao
, Cong Wang
, Xiao Guang Shi
, Xun Gang Diao^*

^*Corresponding author for this work

Changchun University of Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Using magnetron sputtering method, ITO thin films were successfully deposited on glass with target at a mixed atmosphere of Ar and O ₂. The effect of sputtering process parameters on electro-optical characteristics of ITO thin films was discussed using UV-visible-infrared spectrophotometer and four - probe. The experimental results show that when the target angle is 23 ~ 25 degrees, the oxygen flow rate is 7~9sccm, sputtering time is 60~90 min and the sputtering power is 100 ~ 120W, transmittance of ITO thin films is more than 90%, and sheet resistance ranges from 10 ~20Ω /□.

Original language	English
Pages (from-to)	600-604
Number of pages	5
Journal	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
Volume	16
Issue number	6
State	Published - Dec 2010

Keywords

Room temperature deposition
The magnetron sputtering
The target angle
Transparent and conductive ITO thin films

Cite this

@article{c797e2ed04fe488d815ae29a804f12a9,

title = "Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering",

abstract = "Using magnetron sputtering method, ITO thin films were successfully deposited on glass with target at a mixed atmosphere of Ar and O 2. The effect of sputtering process parameters on electro-optical characteristics of ITO thin films was discussed using UV-visible-infrared spectrophotometer and four - probe. The experimental results show that when the target angle is 23 \textasciitilde{} 25 degrees, the oxygen flow rate is 7\textasciitilde{}9sccm, sputtering time is 60\textasciitilde{}90 min and the sputtering power is 100 \textasciitilde{} 120W, transmittance of ITO thin films is more than 90\%, and sheet resistance ranges from 10 \textasciitilde{}20Ω /□.",

keywords = "Room temperature deposition, The magnetron sputtering, The target angle, Transparent and conductive ITO thin films",

author = "Zhao, \{Hai Jiao\} and Cong Wang and Shi, \{Xiao Guang\} and Diao, \{Xun Gang\}",

year = "2010",

month = dec,

language = "英语",

volume = "16",

pages = "600--604",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

issn = "1007-4252",

publisher = "Chinese Academy of Sciences",

number = "6",

}

TY - JOUR

T1 - Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering

AU - Zhao, Hai Jiao

AU - Wang, Cong

AU - Shi, Xiao Guang

AU - Diao, Xun Gang

PY - 2010/12

Y1 - 2010/12

N2 - Using magnetron sputtering method, ITO thin films were successfully deposited on glass with target at a mixed atmosphere of Ar and O 2. The effect of sputtering process parameters on electro-optical characteristics of ITO thin films was discussed using UV-visible-infrared spectrophotometer and four - probe. The experimental results show that when the target angle is 23 ~ 25 degrees, the oxygen flow rate is 7~9sccm, sputtering time is 60~90 min and the sputtering power is 100 ~ 120W, transmittance of ITO thin films is more than 90%, and sheet resistance ranges from 10 ~20Ω /□.

AB - Using magnetron sputtering method, ITO thin films were successfully deposited on glass with target at a mixed atmosphere of Ar and O 2. The effect of sputtering process parameters on electro-optical characteristics of ITO thin films was discussed using UV-visible-infrared spectrophotometer and four - probe. The experimental results show that when the target angle is 23 ~ 25 degrees, the oxygen flow rate is 7~9sccm, sputtering time is 60~90 min and the sputtering power is 100 ~ 120W, transmittance of ITO thin films is more than 90%, and sheet resistance ranges from 10 ~20Ω /□.

KW - Room temperature deposition

KW - The magnetron sputtering

KW - The target angle

KW - Transparent and conductive ITO thin films

UR - https://www.scopus.com/pages/publications/84861321245

M3 - 文章

AN - SCOPUS:84861321245

SN - 1007-4252

VL - 16

SP - 600

EP - 604

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 6

ER -

Preparation and characteristics of ITO thin films with high transmittance and low resistance by tilt magnetron sputtering

Abstract

Keywords

Other files and links

Fingerprint

Cite this