Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

Ruomeng Yu; Lin Dong; Caofeng Pan; Simiao Niu; Hongfei Liu; Wei Liu; Soojin Chua; Dongzhi Chi; Zhong Lin Wang

doi:10.1002/adma.201201020

Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

Ruomeng Yu
, Lin Dong
, Caofeng Pan
, Simiao Niu
, Hongfei Liu
, Wei Liu
, Soojin Chua
, Dongzhi Chi
, Zhong Lin Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.

Original language	English
Pages (from-to)	3532-3537
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	26
DOIs	https://doi.org/10.1002/adma.201201020
State	Published - 10 Jul 2012
Externally published	Yes

Keywords

GaN nanobelts
flexible electronics
piezotronic effects

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10.1002/adma.201201020

Cite this

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title = "Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics",

abstract = "The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.",

keywords = "GaN nanobelts, flexible electronics, piezotronic effects",

author = "Ruomeng Yu and Lin Dong and Caofeng Pan and Simiao Niu and Hongfei Liu and Wei Liu and Soojin Chua and Dongzhi Chi and Wang, \{Zhong Lin\}",

year = "2012",

month = jul,

day = "10",

doi = "10.1002/adma.201201020",

language = "英语",

volume = "24",

pages = "3532--3537",

journal = "Advanced Materials",

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T1 - Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

AU - Yu, Ruomeng

AU - Dong, Lin

AU - Pan, Caofeng

AU - Niu, Simiao

AU - Liu, Hongfei

AU - Liu, Wei

AU - Chua, Soojin

AU - Chi, Dongzhi

AU - Wang, Zhong Lin

PY - 2012/7/10

Y1 - 2012/7/10

N2 - The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.

AB - The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.

KW - GaN nanobelts

KW - flexible electronics

KW - piezotronic effects

UR - https://www.scopus.com/pages/publications/84863692935

U2 - 10.1002/adma.201201020

DO - 10.1002/adma.201201020

M3 - 文章

C2 - 22544827

AN - SCOPUS:84863692935

SN - 0935-9648

VL - 24

SP - 3532

EP - 3537

JO - Advanced Materials

JF - Advanced Materials

IS - 26

ER -

Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics

Abstract

Keywords

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