Physically based evaluation of electron mobility in ultrathin-body double-gate junctionless transistors

In this letter, we presented theoretical results on the low-field electron mobility of ultrathin-body double-gate junctionless transistors. A 1D Poisson-Schrödinger problem perpendicular to the gate is self-consistently solved to get the electron wavefunctions, and the Kubo-Greenwood formula with consideration of phonon, surface roughness, and ionized impurity scattering is employed to evaluate the corresponding mobility components. The dependence of mobility on silicon layer thickness and doping concentration is also investigated.