Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang; Wen Jun Toe; Suriati Paiman; Qiang Gao; H. Hoe Tan; C. Jagadish; Peter J. Reece

doi:10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang^*
, Wen Jun Toe
, Suriati Paiman
, Qiang Gao
, H. Hoe Tan
, C. Jagadish
, Peter J. Reece

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	211-212
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699744
State	Published - 2010
Externally published	Yes
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699744

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Wang, F., Toe, W. J., Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., & Reece, P. J. (2010). Photoluminescence study of optically trapped InP semiconductor nanowires. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 211-212). Article 5699744 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699744

@inproceedings{cf037cefded84344981ae22661439c8e,

title = "Photoluminescence study of optically trapped InP semiconductor nanowires",

abstract = "We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.",

author = "Fan Wang and Toe, \{Wen Jun\} and Suriati Paiman and Qiang Gao and Tan, \{H. Hoe\} and C. Jagadish and Reece, \{Peter J.\}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699744",

language = "英语",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "211--212",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Wang, F, Toe, WJ, Paiman, S, Gao, Q, Tan, HH, Jagadish, C & Reece, PJ 2010, Photoluminescence study of optically trapped InP semiconductor nanowires. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699744, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 211-212, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires. / Wang, Fan; Toe, Wen Jun; Paiman, Suriati et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 211-212 5699744 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoluminescence study of optically trapped InP semiconductor nanowires

AU - Wang, Fan

AU - Toe, Wen Jun

AU - Paiman, Suriati

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, C.

AU - Reece, Peter J.

PY - 2010

Y1 - 2010

N2 - We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

AB - We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

UR - https://www.scopus.com/pages/publications/79951761217

U2 - 10.1109/COMMAD.2010.5699744

DO - 10.1109/COMMAD.2010.5699744

M3 - 会议稿件

AN - SCOPUS:79951761217

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 211

EP - 212

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Wang F, Toe WJ, Paiman S, Gao Q, Tan HH, Jagadish C et al. Photoluminescence study of optically trapped InP semiconductor nanowires. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 211-212. 5699744. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires

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