Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

Wei Zhou; Bo Xu; Huai Zhe Xu; Wei Hong Jiang; Feng Qi Liu; Qian Gong; Ding Ding; Ji Ben Liang; Zhan Guo Wang; Zuo Ming Zhu; Guo Hua Li

doi:10.1116/1.591144

Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

Wei Zhou
, Bo Xu
, Huai Zhe Xu
, Wei Hong Jiang
, Feng Qi Liu
, Qian Gong
, Ding Ding
, Ji Ben Liang
, Zhan Guo Wang
, Zuo Ming Zhu
, Guo Hua Li

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The optical properties of self-assembled In_0.55Al_0.45As/Al_0.5Ga_0.5As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5) GaAs substrates are compared and observed that quantum efficiency for the (311)B substrate is the largest. The formation of the two sets of quantum dots that are different in size on the (001) substrate results in two peaks in the photoluminescence (PL) spectra. The PL peak position of quantum dots depends on the atomic-terminated surface (A or B substrate) at the given In_0.55Al_0.45As coverage. It is shown that the B substrate promotes the formation of 3D islands and the A substrate delays the formation of 3D islands at the same growth thickness.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591144
State	Published - Jan 2000
Externally published	Yes

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title = "Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces",

abstract = "The optical properties of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5) GaAs substrates are compared and observed that quantum efficiency for the (311)B substrate is the largest. The formation of the two sets of quantum dots that are different in size on the (001) substrate results in two peaks in the photoluminescence (PL) spectra. The PL peak position of quantum dots depends on the atomic-terminated surface (A or B substrate) at the given In0.55Al0.45As coverage. It is shown that the B substrate promotes the formation of 3D islands and the A substrate delays the formation of 3D islands at the same growth thickness.",

author = "Wei Zhou and Bo Xu and Xu, \{Huai Zhe\} and Jiang, \{Wei Hong\} and Liu, \{Feng Qi\} and Qian Gong and Ding Ding and Liang, \{Ji Ben\} and Wang, \{Zhan Guo\} and Zhu, \{Zuo Ming\} and Li, \{Guo Hua\}",

year = "2000",

month = jan,

doi = "10.1116/1.591144",

language = "英语",

volume = "18",

pages = "21--24",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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TY - JOUR

T1 - Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

AU - Zhou, Wei

AU - Xu, Bo

AU - Xu, Huai Zhe

AU - Jiang, Wei Hong

AU - Liu, Feng Qi

AU - Gong, Qian

AU - Ding, Ding

AU - Liang, Ji Ben

AU - Wang, Zhan Guo

AU - Zhu, Zuo Ming

AU - Li, Guo Hua

PY - 2000/1

Y1 - 2000/1

N2 - The optical properties of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5) GaAs substrates are compared and observed that quantum efficiency for the (311)B substrate is the largest. The formation of the two sets of quantum dots that are different in size on the (001) substrate results in two peaks in the photoluminescence (PL) spectra. The PL peak position of quantum dots depends on the atomic-terminated surface (A or B substrate) at the given In0.55Al0.45As coverage. It is shown that the B substrate promotes the formation of 3D islands and the A substrate delays the formation of 3D islands at the same growth thickness.

AB - The optical properties of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown by molecular beam epitaxy on (001) and (n11)A/B(n = 3,5) GaAs substrates are compared and observed that quantum efficiency for the (311)B substrate is the largest. The formation of the two sets of quantum dots that are different in size on the (001) substrate results in two peaks in the photoluminescence (PL) spectra. The PL peak position of quantum dots depends on the atomic-terminated surface (A or B substrate) at the given In0.55Al0.45As coverage. It is shown that the B substrate promotes the formation of 3D islands and the A substrate delays the formation of 3D islands at the same growth thickness.

UR - https://www.scopus.com/pages/publications/0034350499

U2 - 10.1116/1.591144

DO - 10.1116/1.591144

M3 - 文章

AN - SCOPUS:0034350499

SN - 1071-1023

VL - 18

SP - 21

EP - 24

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

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