Photoluminescence studies on porous silicon quantum confinement mechanism

Shulin Zhang; Kuoksan He; Yangtian Hou; Xin Wang; Jingjian Li; Peng Diao; Bidong Qian; Shengmin Cai; Akira Fujishijma

Photoluminescence studies on porous silicon quantum confinement mechanism

Shulin Zhang^*
, Kuoksan He
, Yangtian Hou
, Xin Wang
, Jingjian Li
, Peng Diao
, Bidong Qian
, Shengmin Cai
, Akira Fujishijma

^*Corresponding author for this work

Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A novel step-like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HF and current density were for the first time observed for p - type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Editors	M.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
Publisher	Publ by Materials Research Society
Pages	123-128
Number of pages	6
ISBN (Print)	1558991948
State	Published - 1993
Externally published	Yes
Event	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA Duration: 12 Apr 1993 → 14 Apr 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	298
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the Symposium on Silicon-Based Optoelectronic Materials
City	San Francisco, CA, USA
Period	12/04/93 → 14/04/93

Cite this

Zhang, S., He, K., Hou, Y., Wang, X., Li, J., Diao, P., Qian, B., Cai, S., & Fujishijma, A. (1993). Photoluminescence studies on porous silicon quantum confinement mechanism. In M. A. Tischler, R. T. Collins, M. L. W. Thewalt, & G. Abstreiter (Eds.), Materials Research Society Symposium Proceedings (pp. 123-128). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society.

@inproceedings{4b6cde2618a84521a43602c3e1b2a97d,

title = "Photoluminescence studies on porous silicon quantum confinement mechanism",

abstract = "A novel step-like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HF and current density were for the first time observed for p - type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.",

author = "Shulin Zhang and Kuoksan He and Yangtian Hou and Xin Wang and Jingjian Li and Peng Diao and Bidong Qian and Shengmin Cai and Akira Fujishijma",

year = "1993",

language = "英语",

isbn = "1558991948",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "123--128",

editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",

}

Zhang, S, He, K, Hou, Y, Wang, X, Li, J, Diao, P, Qian, B, Cai, S & Fujishijma, A 1993, Photoluminescence studies on porous silicon quantum confinement mechanism. in MA Tischler, RT Collins, MLW Thewalt & G Abstreiter (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 298, Publ by Materials Research Society, pp. 123-128, Proceedings of the Symposium on Silicon-Based Optoelectronic Materials, San Francisco, CA, USA, 12/04/93.

Photoluminescence studies on porous silicon quantum confinement mechanism. / Zhang, Shulin; He, Kuoksan; Hou, Yangtian et al.
Materials Research Society Symposium Proceedings. ed. / M.A. Tischler; R.T. Collins; M.L.W. Thewalt; G. Abstreiter. Publ by Materials Research Society, 1993. p. 123-128 (Materials Research Society Symposium Proceedings; Vol. 298).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoluminescence studies on porous silicon quantum confinement mechanism

AU - Zhang, Shulin

AU - He, Kuoksan

AU - Hou, Yangtian

AU - Wang, Xin

AU - Li, Jingjian

AU - Diao, Peng

AU - Qian, Bidong

AU - Cai, Shengmin

AU - Fujishijma, Akira

PY - 1993

Y1 - 1993

N2 - A novel step-like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HF and current density were for the first time observed for p - type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

AB - A novel step-like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HF and current density were for the first time observed for p - type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

UR - https://www.scopus.com/pages/publications/0027883071

M3 - 会议稿件

AN - SCOPUS:0027883071

SN - 1558991948

T3 - Materials Research Society Symposium Proceedings

SP - 123

EP - 128

BT - Materials Research Society Symposium Proceedings

A2 - Tischler, M.A.

A2 - Collins, R.T.

A2 - Thewalt, M.L.W.

A2 - Abstreiter, G.

PB - Publ by Materials Research Society

T2 - Proceedings of the Symposium on Silicon-Based Optoelectronic Materials

Y2 - 12 April 1993 through 14 April 1993

ER -

Photoluminescence studies on porous silicon quantum confinement mechanism

Abstract

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