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Photoluminenscence property of ferromagnetic ZnMnO thin films

  • Hongliang Bai
  • , Shumin He
  • , Guolei Liu*
  • , Qiang Cao
  • , Dapeng Zhu
  • , Yanxue Chen
  • , Shishen Yan
  • , Liangmo Mei
  • *Corresponding author for this work
  • Shandong University

Research output: Contribution to journalArticlepeer-review

Abstract

High quality Mn doped ZnO thin films were grown on c-plane Al 2O 3 by oxygen plasma assisted molecular beam epitaxy. Photoluminescence spectra were investigated on the ferromagnetic ZnMnO films. An additional emission located at ∼3.32 eV was observed on these ferromagnetic films for both as-grown and oxygen-annealed samples. It is assigned to the recombination of neutral acceptor bound excitons. The ionization energy of the acceptor was estimated to be 53-80 meV. The observed ferromagnetism was explained to relate with acceptor-type defects.

Original languageEnglish
Pages (from-to)2126-2130
Number of pages5
JournalPhysica B: Condensed Matter
Volume407
Issue number12
DOIs
StatePublished - 15 Jun 2012
Externally publishedYes

Keywords

  • Ferromagnetism
  • Photoluminescence spectrum
  • ZnMnO

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