Photodetection application of one-step synthesized wafer-scale monolayer MoS₂ by chemical vapor deposition

Monolayer MoS₂ is a known candidate to replace silicon-based materials for photodetection purposes. Achieving industrial production and application of MoS₂ calls for efficient and economic synthesis of such material. Here, we report a one-step and low-cost chemical vapor deposition method for the controlled synthesis of high quality and uniform wafer-scale (approximately 9.5 × 4.5 cm) monolayer MoS₂ film on SiO₂/Si substrates. Using the as-synthesized MoS₂ films, MoS₂/PbS quantum dot hybrid device arrays are also fabricated. These hybrid devices have broad spectral photoresponse (457-1064 nm), rapid response rate, high responsivity of approximately 1.8 × 10⁴ A W^-1, and ultrahigh detectivity of approximately 7.6 × 10¹³ Jones, which outperforms other pristine two-dimensional as well as commercial Si and InGaAs materials. This low-cost and efficient method of growing wafer-scale monolayer MoS₂, as well as the excellent performance of its hybrid device arrays, will strongly support the production and application of monolayer MoS₂ in the future.