Phosphorus-doped bismuth telluride films by electrodeposition

Jian Zhou; Qinghan Lin; Hengyi Li; Xuan Cheng

doi:10.1016/j.matchemphys.2013.05.033

Phosphorus-doped bismuth telluride films by electrodeposition

Jian Zhou^*
, Qinghan Lin
, Hengyi Li
, Xuan Cheng

^*Corresponding author for this work

College of Materials
Xiamen University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Phosphorus-doped Bi₂Te₃ films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi₂Te₃ solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m³ C^-1 and the electrical conductivity 280 S cm^-1. The thermal conductivity is 0.47 W m^-1 K^-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi₂Te₃

Original language	English
Pages (from-to)	401-405
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	141
Issue number	1
DOIs	https://doi.org/10.1016/j.matchemphys.2013.05.033
State	Published - 15 Aug 2013
Externally published	Yes

Keywords

A. Chalcogenides
C. Electrochemical techniques
C. Electron microscopy
D. Electrical conductivity
D. Thermal conductivity

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10.1016/j.matchemphys.2013.05.033

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@article{06b4a400ac27485685a2bb7945a7f1b6,

title = "Phosphorus-doped bismuth telluride films by electrodeposition",

abstract = "Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m3 C-1 and the electrical conductivity 280 S cm-1. The thermal conductivity is 0.47 W m-1 K-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3",

keywords = "A. Chalcogenides, C. Electrochemical techniques, C. Electron microscopy, D. Electrical conductivity, D. Thermal conductivity",

author = "Jian Zhou and Qinghan Lin and Hengyi Li and Xuan Cheng",

year = "2013",

month = aug,

day = "15",

doi = "10.1016/j.matchemphys.2013.05.033",

language = "英语",

volume = "141",

pages = "401--405",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Phosphorus-doped bismuth telluride films by electrodeposition

AU - Zhou, Jian

AU - Lin, Qinghan

AU - Li, Hengyi

AU - Cheng, Xuan

PY - 2013/8/15

Y1 - 2013/8/15

N2 - Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m3 C-1 and the electrical conductivity 280 S cm-1. The thermal conductivity is 0.47 W m-1 K-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3

AB - Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m3 C-1 and the electrical conductivity 280 S cm-1. The thermal conductivity is 0.47 W m-1 K-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3

KW - A. Chalcogenides

KW - C. Electrochemical techniques

KW - C. Electron microscopy

KW - D. Electrical conductivity

KW - D. Thermal conductivity

UR - https://www.scopus.com/pages/publications/84879976805

U2 - 10.1016/j.matchemphys.2013.05.033

DO - 10.1016/j.matchemphys.2013.05.033

M3 - 文章

AN - SCOPUS:84879976805

SN - 0254-0584

VL - 141

SP - 401

EP - 405

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 1

ER -

Phosphorus-doped bismuth telluride films by electrodeposition

Abstract

Keywords

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