Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy

Yang Wang; Shuhong Hu; Hao Xie; Yan Sun; Chao Wang; Ning Dai

doi:10.1007/s00339-018-2105-4

Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy

Yang Wang
, Shuhong Hu^*
, Hao Xie
, Yan Sun
, Chao Wang
, Ning Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
University of Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.

Original language	English
Article number	700
Journal	Applied Physics A: Materials Science and Processing
Volume	124
Issue number	10
DOIs	https://doi.org/10.1007/s00339-018-2105-4
State	Published - 1 Oct 2018
Externally published	Yes

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title = "Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy",

abstract = "Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.",

author = "Yang Wang and Shuhong Hu and Hao Xie and Yan Sun and Chao Wang and Ning Dai",

note = "Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

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doi = "10.1007/s00339-018-2105-4",

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T1 - Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy

AU - Wang, Yang

AU - Hu, Shuhong

AU - Xie, Hao

AU - Sun, Yan

AU - Wang, Chao

AU - Dai, Ning

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.

AB - Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.

UR - https://www.scopus.com/pages/publications/85053531977

U2 - 10.1007/s00339-018-2105-4

DO - 10.1007/s00339-018-2105-4

M3 - 文章

AN - SCOPUS:85053531977

SN - 0947-8396

VL - 124

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 10

M1 - 700

ER -

Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy

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