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Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM

  • Lingling Chen*
  • , Meng Zhang
  • , Yue Cai
  • , Chun Zhou
  • , Ling Ren
  • , Zhigang Zhang
  • *Corresponding author for this work
  • Peking University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed. Simulation demonstrates a uniform modulation depth up to 25% for the wavelength from 1000 to 1080 run.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
StatePublished - 2009
Externally publishedYes
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China
Duration: 30 Aug 20093 Sep 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
Country/TerritoryChina
CityShanghai
Period30/08/093/09/09

Keywords

  • High modulation depth
  • Phase shift
  • SESAM

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