Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM

Lingling Chen; Meng Zhang; Yue Cai; Chun Zhou; Ling Ren; Zhigang Zhang

doi:10.1109/CLEOPR.2009.5292612

Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM

Lingling Chen^*
, Meng Zhang
, Yue Cai
, Chun Zhou
, Ling Ren
, Zhigang Zhang

^*Corresponding author for this work

School of Electronics Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed. Simulation demonstrates a uniform modulation depth up to 25% for the wavelength from 1000 to 1080 nm.

Original language	English
Title of host publication	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
DOIs	https://doi.org/10.1109/CLEOPR.2009.5292612
State	Published - 2009
Externally published	Yes
Event	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China Duration: 30 Aug 2009 → 3 Sep 2009

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Conference

Conference	CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	China
City	Shanghai
Period	30/08/09 → 3/09/09

Keywords

High modulation depth
Phase shift
SESAM

Access to Document

10.1109/CLEOPR.2009.5292612

Cite this

Chen, L., Zhang, M., Cai, Y., Zhou, C., Ren, L., & Zhang, Z. (2009). Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM. In CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics Article 5292612 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2009.5292612

@inproceedings{dba80bf6ed0b4105b6ec880312d9b458,

title = "Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM",

abstract = "A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed. Simulation demonstrates a uniform modulation depth up to 25\% for the wavelength from 1000 to 1080 nm.",

keywords = "High modulation depth, Phase shift, SESAM",

author = "Lingling Chen and Meng Zhang and Yue Cai and Chun Zhou and Ling Ren and Zhigang Zhang",

year = "2009",

doi = "10.1109/CLEOPR.2009.5292612",

language = "英语",

isbn = "9781424438303",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics",

note = "CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 30-08-2009 Through 03-09-2009",

}

Chen, L, Zhang, M, Cai, Y, Zhou, C, Ren, L & Zhang, Z 2009, Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM. in CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics., 5292612, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics, Shanghai, China, 30/08/09. https://doi.org/10.1109/CLEOPR.2009.5292612

Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM. / Chen, Lingling; Zhang, Meng; Cai, Yue et al.
CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics. 2009. 5292612 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM

AU - Chen, Lingling

AU - Zhang, Meng

AU - Cai, Yue

AU - Zhou, Chun

AU - Ren, Ling

AU - Zhang, Zhigang

PY - 2009

Y1 - 2009

N2 - A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed. Simulation demonstrates a uniform modulation depth up to 25% for the wavelength from 1000 to 1080 nm.

AB - A new InGaAs/InAlAs multi-layer design of broadband SESAM including precise phase shift compensation is proposed. Simulation demonstrates a uniform modulation depth up to 25% for the wavelength from 1000 to 1080 nm.

KW - High modulation depth

KW - Phase shift

KW - SESAM

UR - https://www.scopus.com/pages/publications/71249092095

U2 - 10.1109/CLEOPR.2009.5292612

DO - 10.1109/CLEOPR.2009.5292612

M3 - 会议稿件

AN - SCOPUS:71249092095

SN - 9781424438303

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics

T2 - CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 30 August 2009 through 3 September 2009

ER -

Phase shift compensation of high modulation depth multi-layer InGaAs/InAlAs SESAM

Abstract

Publication series

Conference

Keywords

Access to Document

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