Performance of pentacene thin film transistors fabricated with different deposition speeds

Hui Kun Yao; Lei Sun; You Feng Geng; Yu Qian Xia; Yi Jiao Wang; Zhi Yuan Lun; Tai Huan Wang; Wen Tong Zhu; De Dong Han

doi:10.1109/ICSICT.2012.6467745

Performance of pentacene thin film transistors fabricated with different deposition speeds

Hui Kun Yao^*
, Lei Sun
, You Feng Geng
, Yu Qian Xia
, Yi Jiao Wang
, Zhi Yuan Lun
, Tai Huan Wang
, Wen Tong Zhu
, De Dong Han

^*Corresponding author for this work

Peking University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Bottom-gated pentacene thin film transistors have been fabricated with different deposition speeds and the devices' current-voltage properties are reported. The pentacene films are formed through evaporation in low pressure. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the transfer characteristics and output properties. Pentacene-TFTs can exhibit excellent electrical properties while V_g changes from 0 to -70V, and I_on/I _off ratio is larger than 10⁴ and OFF-state current is smaller than -1.3×10^-10A as V_d=-100V.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467745
State	Published - 2012
Externally published	Yes
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

Keywords

Pentacene-TFT
electrical properties
evaporation

Access to Document

10.1109/ICSICT.2012.6467745

Cite this

Yao, H. K., Sun, L., Geng, Y. F., Xia, Y. Q., Wang, Y. J., Lun, Z. Y., Wang, T. H., Zhu, W. T., & Han, D. D. (2012). Performance of pentacene thin film transistors fabricated with different deposition speeds. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467745 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467745

Yao, Hui Kun ; Sun, Lei ; Geng, You Feng et al. / Performance of pentacene thin film transistors fabricated with different deposition speeds. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{250a1708574c415680be68e105262d61,

title = "Performance of pentacene thin film transistors fabricated with different deposition speeds",

abstract = "Bottom-gated pentacene thin film transistors have been fabricated with different deposition speeds and the devices' current-voltage properties are reported. The pentacene films are formed through evaporation in low pressure. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the transfer characteristics and output properties. Pentacene-TFTs can exhibit excellent electrical properties while Vg changes from 0 to -70V, and Ion/I off ratio is larger than 104 and OFF-state current is smaller than -1.3×10-10A as Vd=-100V.",

keywords = "Pentacene-TFT, electrical properties, evaporation",

author = "Yao, \{Hui Kun\} and Lei Sun and Geng, \{You Feng\} and Xia, \{Yu Qian\} and Wang, \{Yi Jiao\} and Lun, \{Zhi Yuan\} and Wang, \{Tai Huan\} and Zhu, \{Wen Tong\} and Han, \{De Dong\}",

year = "2012",

doi = "10.1109/ICSICT.2012.6467745",

language = "英语",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Yao, HK, Sun, L, Geng, YF, Xia, YQ, Wang, YJ, Lun, ZY, Wang, TH, Zhu, WT & Han, DD 2012, Performance of pentacene thin film transistors fabricated with different deposition speeds. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467745, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467745

Performance of pentacene thin film transistors fabricated with different deposition speeds. / Yao, Hui Kun; Sun, Lei; Geng, You Feng et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467745 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Performance of pentacene thin film transistors fabricated with different deposition speeds

AU - Yao, Hui Kun

AU - Sun, Lei

AU - Geng, You Feng

AU - Xia, Yu Qian

AU - Wang, Yi Jiao

AU - Lun, Zhi Yuan

AU - Wang, Tai Huan

AU - Zhu, Wen Tong

AU - Han, De Dong

PY - 2012

Y1 - 2012

N2 - Bottom-gated pentacene thin film transistors have been fabricated with different deposition speeds and the devices' current-voltage properties are reported. The pentacene films are formed through evaporation in low pressure. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the transfer characteristics and output properties. Pentacene-TFTs can exhibit excellent electrical properties while Vg changes from 0 to -70V, and Ion/I off ratio is larger than 104 and OFF-state current is smaller than -1.3×10-10A as Vd=-100V.

AB - Bottom-gated pentacene thin film transistors have been fabricated with different deposition speeds and the devices' current-voltage properties are reported. The pentacene films are formed through evaporation in low pressure. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the transfer characteristics and output properties. Pentacene-TFTs can exhibit excellent electrical properties while Vg changes from 0 to -70V, and Ion/I off ratio is larger than 104 and OFF-state current is smaller than -1.3×10-10A as Vd=-100V.

KW - Pentacene-TFT

KW - electrical properties

KW - evaporation

UR - https://www.scopus.com/pages/publications/84874893884

U2 - 10.1109/ICSICT.2012.6467745

DO - 10.1109/ICSICT.2012.6467745

M3 - 会议稿件

AN - SCOPUS:84874893884

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Yao HK, Sun L, Geng YF, Xia YQ, Wang YJ, Lun ZY et al. Performance of pentacene thin film transistors fabricated with different deposition speeds. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467745. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6467745

Performance of pentacene thin film transistors fabricated with different deposition speeds

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Keywords

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