Passivating the Surface of TiO2 Photoelectrodes with Nb2O5 and Al2O3 for High-Efficiency Dye-Sensitized Solar Cells

Zhaoyue Liu; Lin Li

doi:10.1007/978-1-4939-1628-3_10

Passivating the Surface of TiO₂ Photoelectrodes with Nb₂O₅ and Al₂O₃ for High-Efficiency Dye-Sensitized Solar Cells

Zhaoyue Liu^*
, Lin Li

^*Corresponding author for this work

School of Chemistry

Beihang University

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

In this contribution, we reported a method to passivate the surface of the TiO₂ photoelectrode with Nb₂O₅ and Al₂O₃ layer, and its application for the dye-sensitized solar cells. The surface of TiO₂ photoelectrode was passivated by depositing Nb₂O₅ and Al₂O₃ layer in turn using surface sol–gel technology. After the TiO₂ photoelectrode was passivated by Nb₂O₅ layer, the efficiency of the TiO₂/Nb₂O₅ cell increased from 3.6 to 4.0 %. The Al₂O₃ layer on the TiO₂/Nb₂O₅ electrode further suppressed the generation of the dark current, resulting in 25 % improvement in device performance comparing with that of the TiO₂/Nb₂O₅ cell. The electrochemical impedance spectroscopy was used to investigate the influence of the Nb₂O₅ and Al₂O₃ layer on the Helmholtz layer capacitance of the TiO₂ electrode, and provided the evidences for the formation of the energy barriers.

Original language	English
Title of host publication	Nanostructure Science and Technology
Publisher	Springer Publishing Company
Pages	201-210
Number of pages	10
DOIs	https://doi.org/10.1007/978-1-4939-1628-3_10
State	Published - 2014

Publication series

Name	Nanostructure Science and Technology
Volume	174
ISSN (Print)	1571-5744
ISSN (Electronic)	2197-7976

Keywords

Conduction Band
Constant Phase Element
Dark Current
Fill Factor
TiO2 Electrode

Access to Document

10.1007/978-1-4939-1628-3_10

Cite this

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title = "Passivating the Surface of TiO2 Photoelectrodes with Nb2O5 and Al2O3 for High-Efficiency Dye-Sensitized Solar Cells",

abstract = "In this contribution, we reported a method to passivate the surface of the TiO2 photoelectrode with Nb2O5 and Al2O3 layer, and its application for the dye-sensitized solar cells. The surface of TiO2 photoelectrode was passivated by depositing Nb2O5 and Al2O3 layer in turn using surface sol–gel technology. After the TiO2 photoelectrode was passivated by Nb2O5 layer, the efficiency of the TiO2/Nb2O5 cell increased from 3.6 to 4.0 \%. The Al2O3 layer on the TiO2/Nb2O5 electrode further suppressed the generation of the dark current, resulting in 25 \% improvement in device performance comparing with that of the TiO2/Nb2O5 cell. The electrochemical impedance spectroscopy was used to investigate the influence of the Nb2O5 and Al2O3 layer on the Helmholtz layer capacitance of the TiO2 electrode, and provided the evidences for the formation of the energy barriers.",

keywords = "Conduction Band, Constant Phase Element, Dark Current, Fill Factor, TiO2 Electrode",

author = "Zhaoyue Liu and Lin Li",

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N2 - In this contribution, we reported a method to passivate the surface of the TiO2 photoelectrode with Nb2O5 and Al2O3 layer, and its application for the dye-sensitized solar cells. The surface of TiO2 photoelectrode was passivated by depositing Nb2O5 and Al2O3 layer in turn using surface sol–gel technology. After the TiO2 photoelectrode was passivated by Nb2O5 layer, the efficiency of the TiO2/Nb2O5 cell increased from 3.6 to 4.0 %. The Al2O3 layer on the TiO2/Nb2O5 electrode further suppressed the generation of the dark current, resulting in 25 % improvement in device performance comparing with that of the TiO2/Nb2O5 cell. The electrochemical impedance spectroscopy was used to investigate the influence of the Nb2O5 and Al2O3 layer on the Helmholtz layer capacitance of the TiO2 electrode, and provided the evidences for the formation of the energy barriers.

AB - In this contribution, we reported a method to passivate the surface of the TiO2 photoelectrode with Nb2O5 and Al2O3 layer, and its application for the dye-sensitized solar cells. The surface of TiO2 photoelectrode was passivated by depositing Nb2O5 and Al2O3 layer in turn using surface sol–gel technology. After the TiO2 photoelectrode was passivated by Nb2O5 layer, the efficiency of the TiO2/Nb2O5 cell increased from 3.6 to 4.0 %. The Al2O3 layer on the TiO2/Nb2O5 electrode further suppressed the generation of the dark current, resulting in 25 % improvement in device performance comparing with that of the TiO2/Nb2O5 cell. The electrochemical impedance spectroscopy was used to investigate the influence of the Nb2O5 and Al2O3 layer on the Helmholtz layer capacitance of the TiO2 electrode, and provided the evidences for the formation of the energy barriers.

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