P -type conduction in nitrogen-doped ZnS nanoribbons

G. D. Yuan; W. J. Zhang; W. F. Zhang; X. Fan; I. Bello; C. S. Lee; S. T. Lee

doi:10.1063/1.3025846

P -type conduction in nitrogen-doped ZnS nanoribbons

G. D. Yuan
, W. J. Zhang
, W. F. Zhang
, X. Fan
, I. Bello
, C. S. Lee
, S. T. Lee

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report reproducible p -type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p -type behavior of ZnS NRs and significant enhancement in p -type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p -type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS -H bonding.

Original language	English
Article number	213102
Journal	Applied Physics Letters
Volume	93
Issue number	21
DOIs	https://doi.org/10.1063/1.3025846
State	Published - 2008
Externally published	Yes

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abstract = "We report reproducible p -type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p -type behavior of ZnS NRs and significant enhancement in p -type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p -type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS -H bonding.",

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AU - Yuan, G. D.

AU - Zhang, W. J.

AU - Zhang, W. F.

AU - Fan, X.

AU - Bello, I.

AU - Lee, C. S.

AU - Lee, S. T.

PY - 2008

Y1 - 2008

N2 - We report reproducible p -type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p -type behavior of ZnS NRs and significant enhancement in p -type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p -type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS -H bonding.

AB - We report reproducible p -type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p -type behavior of ZnS NRs and significant enhancement in p -type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p -type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS -H bonding.

UR - https://www.scopus.com/pages/publications/57049124874

U2 - 10.1063/1.3025846

DO - 10.1063/1.3025846

M3 - 文章

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

P -type conduction in nitrogen-doped ZnS nanoribbons

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