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Oxygen-doped boron nitride nanosheets with excellent performance in hydrogen storage

  • Weiwei Lei*
  • , Hui Zhang
  • , Ying Wu
  • , Bao Zhang
  • , Dan Liu
  • , Si Qin
  • , Zongwen Liu
  • , Limin Liu
  • , Yanming Ma
  • , Ying Chen
  • *Corresponding author for this work
  • Deakin University
  • China Academy of Engineering Physics
  • Shenyang University
  • China Iron and Steel Research Institute Group
  • University of Sydney
  • Jilin University

Research output: Contribution to journalArticlepeer-review

Abstract

Hydrogen is considered one of the best energy sources. However, the lack of effective, stable, and safe storage materials has severely prevented its practical application. Strong effort has been made to try new nanostructured materials as new storage materials. In this study, oxygen-doped boron nitride (BN) nanosheets with 2-6 atomic layers, synthesized by a facile sol-gel method, show a storage capacity of 5.7wt% under 5MPa at room temperature, which is the highest hydrogen storage ever reported for any BN materials. Importantly, 89% of the stored hydrogen can be released when the hydrogen pressure is reduced to ambient conditions. Furthermore, the BN nanosheets exhibit an excellent storage cycling stability due to the stable two-dimensional nanostructure. The first principles calculations reveal that the high hydrogen storage mainly origins from the oxygen-doping of the BN nanosheets with increased adsorption energies of H2 on BN by 20-80% over pure BN sheets at the different coverage.

Original languageEnglish
Pages (from-to)219-224
Number of pages6
JournalNano Energy
Volume6
DOIs
StatePublished - May 2014
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Boron nitride
  • First-principle calculations
  • Material science
  • Nanostructures
  • Nitrides

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