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Oxidation behavior of high-entropy (Zr0.2Hf0.2Ta0.2Nb0.2Ti0.2)B2 ceramic with 20% SiC addition

  • Ruru Guo
  • , Zhijian Li
  • , Lu Li*
  • , Ruixiao Zheng*
  • , Chaoli Ma
  • *Corresponding author for this work
  • Beihang University

Research output: Contribution to journalArticlepeer-review

Abstract

Oxidation behaviors of (Zr0.2Hf0.2Ta0.2Nb0.2Ti0.2)B2 high-entropy boride (HEB) ceramic and its composite containing 20 vol% SiC (HEB-20SiC) were studied at 1100–1400 °C in air for the first time. Compared with the HEB, the HEB-20SiC showed the significantly lower oxidation rate, the higher oxidation activation energy and the improved oxidation resistance, which could be attributed to the formation of stable and dense oxide scale containing SiO2. A layered oxidation structure was observed in the cross-section of HEB-20SiC, ascribing to the active oxidation, the generation of SiO and TiO gases, their subsequent outward diffusion and the re-oxidation at the surface.

Original languageEnglish
Pages (from-to)5181-5189
Number of pages9
JournalJournal of the European Ceramic Society
Volume44
Issue number8
DOIs
StatePublished - Jul 2024

Keywords

  • High-entropy ceramic
  • Oxidation behavior
  • SiC addition
  • Transition metal boride

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