Oxidation behavior of copper thin films by ion implantation

In order to inhibit the oxidation induced rising in resistance and degradation of mechanical performance of copper thin films, ion implantation was employed for modification of the copper thin film surface. X-ray diffraction and Rutherford Back Scattering techniques were adopted to investigate and analyze the oxidation characteristics of the films. It is indicated that ion implantation has insignificant effect on the rising in electrical resistance. In addition, the oxidation resistance increase with the increasing in dose of ion implantation. It was observed that the oxidation behavior of copper thin films was changed due to the ion implantation. After implantation, the oxide consists of Cu₂O and CuO, instead Cu₂O prior to implantation.