Orthogonal design for fabrication of transparent conductive ZnO:Al films by DC magnetron sputtering at low temperature

Tao Wang; Xun Gang Diao; Yuan Jie Shu; Zhe Wu

Orthogonal design for fabrication of transparent conductive ZnO:Al films by DC magnetron sputtering at low temperature

Tao Wang^*
, Xun Gang Diao
, Yuan Jie Shu
, Zhe Wu

^*Corresponding author for this work

Beihang University
China Academy of Engineering Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Based on orthogonal design, Aluminium-doped zinc oxide (ZnO:Al) films were prepared by D.C. reactive magnetron sputtering on glass substrate from an alloy target (Zn:Al 2wt%). The temperature of the sputtering chamber was kept at 50°C. Mathematical statistical method was employed to analyze the experimental results derived from optical and electrical measurements with spectrophotometer and Hall-effect measurement system. Dependences of the films' optical-electrical properties on the four main factors such as sputtering time, target-substrate distance, sputtering power, O₂ flow rate were investigated respectively. The comprehensive optimal fabrication condition of ZAO films was obtained as well ultimately, that is 20min in sputtering time, 6cm in target-substrate distance, and 80W in sputtering power, 7percent in flow rate,-the corresponding film's φ_ic value is 4.1050 × 10^-2/Ω, resistivity is 3.9 × 10^-4Ω·cm and 1.09 × 10²¹/cm³ of carrier concentration.

Original language	English
Pages (from-to)	369-372
Number of pages	4
Journal	Gongneng Cailiao/Journal of Functional Materials
Volume	38
Issue number	3
State	Published - Mar 2007

Keywords

Low substrate temperature
Magnetron sputtering
Orthogonal design
ZAO films

Cite this

@article{c8883da09a8745e7a979ad77033b65e0,

title = "Orthogonal design for fabrication of transparent conductive ZnO:Al films by DC magnetron sputtering at low temperature",

abstract = "Based on orthogonal design, Aluminium-doped zinc oxide (ZnO:Al) films were prepared by D.C. reactive magnetron sputtering on glass substrate from an alloy target (Zn:Al 2wt\%). The temperature of the sputtering chamber was kept at 50°C. Mathematical statistical method was employed to analyze the experimental results derived from optical and electrical measurements with spectrophotometer and Hall-effect measurement system. Dependences of the films' optical-electrical properties on the four main factors such as sputtering time, target-substrate distance, sputtering power, O2 flow rate were investigated respectively. The comprehensive optimal fabrication condition of ZAO films was obtained as well ultimately, that is 20min in sputtering time, 6cm in target-substrate distance, and 80W in sputtering power, 7percent in flow rate,-the corresponding film's φic value is 4.1050 × 10-2/Ω, resistivity is 3.9 × 10-4Ω·cm and 1.09 × 1021/cm3 of carrier concentration.",

keywords = "Low substrate temperature, Magnetron sputtering, Orthogonal design, ZAO films",

author = "Tao Wang and Diao, \{Xun Gang\} and Shu, \{Yuan Jie\} and Zhe Wu",

year = "2007",

month = mar,

language = "英语",

volume = "38",

pages = "369--372",

journal = "Gongneng Cailiao/Journal of Functional Materials",

issn = "1001-9731",

publisher = "Journal of Functional Materials",

number = "3",

}

TY - JOUR

T1 - Orthogonal design for fabrication of transparent conductive ZnO:Al films by DC magnetron sputtering at low temperature

AU - Wang, Tao

AU - Diao, Xun Gang

AU - Shu, Yuan Jie

AU - Wu, Zhe

PY - 2007/3

Y1 - 2007/3

N2 - Based on orthogonal design, Aluminium-doped zinc oxide (ZnO:Al) films were prepared by D.C. reactive magnetron sputtering on glass substrate from an alloy target (Zn:Al 2wt%). The temperature of the sputtering chamber was kept at 50°C. Mathematical statistical method was employed to analyze the experimental results derived from optical and electrical measurements with spectrophotometer and Hall-effect measurement system. Dependences of the films' optical-electrical properties on the four main factors such as sputtering time, target-substrate distance, sputtering power, O2 flow rate were investigated respectively. The comprehensive optimal fabrication condition of ZAO films was obtained as well ultimately, that is 20min in sputtering time, 6cm in target-substrate distance, and 80W in sputtering power, 7percent in flow rate,-the corresponding film's φic value is 4.1050 × 10-2/Ω, resistivity is 3.9 × 10-4Ω·cm and 1.09 × 1021/cm3 of carrier concentration.

AB - Based on orthogonal design, Aluminium-doped zinc oxide (ZnO:Al) films were prepared by D.C. reactive magnetron sputtering on glass substrate from an alloy target (Zn:Al 2wt%). The temperature of the sputtering chamber was kept at 50°C. Mathematical statistical method was employed to analyze the experimental results derived from optical and electrical measurements with spectrophotometer and Hall-effect measurement system. Dependences of the films' optical-electrical properties on the four main factors such as sputtering time, target-substrate distance, sputtering power, O2 flow rate were investigated respectively. The comprehensive optimal fabrication condition of ZAO films was obtained as well ultimately, that is 20min in sputtering time, 6cm in target-substrate distance, and 80W in sputtering power, 7percent in flow rate,-the corresponding film's φic value is 4.1050 × 10-2/Ω, resistivity is 3.9 × 10-4Ω·cm and 1.09 × 1021/cm3 of carrier concentration.

KW - Low substrate temperature

KW - Magnetron sputtering

KW - Orthogonal design

KW - ZAO films

UR - https://www.scopus.com/pages/publications/34248207068

M3 - 文章

AN - SCOPUS:34248207068

SN - 1001-9731

VL - 38

SP - 369

EP - 372

JO - Gongneng Cailiao/Journal of Functional Materials

JF - Gongneng Cailiao/Journal of Functional Materials

IS - 3

ER -

Orthogonal design for fabrication of transparent conductive ZnO:Al films by DC magnetron sputtering at low temperature

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Keywords

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