Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

Y. Xu; W. Lin; S. Petit-Watelot; M. Hehn; H. Rinnert; Y. Lu; F. Montaigne; D. Lacour; S. Andrieu; S. Mangin

doi:10.1063/1.4939966

Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

Y. Xu
, W. Lin
, S. Petit-Watelot
, M. Hehn
, H. Rinnert
, Y. Lu
, F. Montaigne
, D. Lacour
, S. Andrieu
, S. Mangin^*

^*Corresponding author for this work

Université de Lorraine

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Recently, the study of interactions between electron spins and heat currents has given rise to the field of "Spin Caloritronics". Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

Original language	English
Article number	023907
Journal	Journal of Applied Physics
Volume	119
Issue number	2
DOIs	https://doi.org/10.1063/1.4939966
State	Published - 14 Jan 2016
Externally published	Yes

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10.1063/1.4939966

Cite this

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title = "Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates",

abstract = "Recently, the study of interactions between electron spins and heat currents has given rise to the field of {"}Spin Caloritronics{"}. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.",

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T1 - Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

AU - Xu, Y.

AU - Lin, W.

AU - Petit-Watelot, S.

AU - Hehn, M.

AU - Rinnert, H.

AU - Lu, Y.

AU - Montaigne, F.

AU - Lacour, D.

AU - Andrieu, S.

AU - Mangin, S.

PY - 2016/1/14

Y1 - 2016/1/14

N2 - Recently, the study of interactions between electron spins and heat currents has given rise to the field of "Spin Caloritronics". Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

AB - Recently, the study of interactions between electron spins and heat currents has given rise to the field of "Spin Caloritronics". Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

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U2 - 10.1063/1.4939966

DO - 10.1063/1.4939966

M3 - 文章

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SN - 0021-8979

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023907

ER -

Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

Abstract

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